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1、ARTICLEINPRESSJournalofPhysicsandChemistryofSolids70(2009)1142–1145ContentslistsavailableatScienceDirectJournalofPhysicsandChemistryofSolidsjournalhomepage:www.elsevier.com/locate/jpcsImpedanceresponseofpolycrystallinetungstenoxideabc,aA.K.Batra,J.R.Currie,MohammadA.Alim,M.D.Ag
2、garwalaDepartmentofPhysics,AlabamaA&MUniversity,P.O.Box1268,Huntsville,AL35762,USAbAvionicsDepartment,NASAGeorgeC.MarshallSpaceFlightCenter,Huntsville,AL35812,USAcDepartmentofElectricalEngineering,AlabamaA&MUniversity,P.O.Box297,Huntsville,AL35762,USAarticleinfoabstractArticlehi
3、story:Polycrystallinetungstenoxide(WO3)pelletswerepreparedbyconventionalceramicprocessingReceived18June2007technology.Theacsmall-signalelectricaldataacquiredinthefrequency(f)range100Hzrfr1MHzatReceivedinrevisedformtemperature(T)rangingthe31–1001Crevealeddistinctsemicircularrelax
4、ationintheimpedanceplane.23April2008Thisrelaxationindicatesdevicebehaviororiginatingfromthegrainboundaries.ThelumpedgrainAccepted23June2009impedanceassociatedwiththedeviceactionremainedtoosmalltodetectwhenthelargeresistancescaleisrealized.Thesemicircularrelaxationisthermallyacti
5、vatedindicating0.58eVastheactivationKeywords:energyfortherelaxationtime.A.Ceramics&2009ElsevierLtd.Allrightsreserved.A.OxidesA.SemiconductorsD.ElectricalPropertiesD.DielectricProperties1.Introductionandelectrode(orcontact)impedance(Zel)accordingtotheircharacteristictimeconstants
6、.ThesurfaceelectronicstructureofmetaloxidesplayanTheparallel-plateconfigurationiscommonlyusedforbulkimportantrolefortheiruseinmanytechnologicalapplicationssystemsutilizingsinusoidalvoltageasafunctionofmeasurementsuchascatalysis,chemicalsensing,andhigh-efficiencysolarcellsfrequency
7、.However,formanyapplicationsandsituationsitisthe[1–5].Thebulkelectronicpropertiesoftungstenoxidehavebeenin-plane(surface)electricalpropertiesratherthanthrough-planewidelystudied[6].However,thesurfaceelectronicpropertiesare(bulk)propertiesofthesamplethatneedtobecharacterized.Thel
8、ittleunderstoodespeciallysincetheelectronicprop
