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1、ThyristorTheoryandDesignConsiderationsHandbookHBD855/DRev.1,Nov−2006©SCILLC,2005PreviousEdition©2005asExcerptedfromDL137/D“AllRightsReserved’’http://onsemi.com1ABOUTTHYRISTORSThyristorscantakemanyforms,buttheyhavecertaincapacitordischargeignitors,engi
2、neignitionsystems,andthingsincommon.Allofthemaresolidstateswitchesmanyotherkindsofequipment.whichactasopencircuitscapableofwithstandingtheAlthoughthyristorsofallsortsaregenerallyrugged,ratedvoltageuntiltriggered.Whentheyaretriggered,thereareseveralpoi
3、ntstokeepinmindwhendesigningthyristorsbecomelow−impedancecurrentpathsandcircuitsusingthem.Oneofthemostimportantistoremaininthatconditionuntilthecurrenteitherstopsorrespectthedevicesratedlimitsonrateofchangeofdropsbelowaminimumvaluecalledtheholdingleve
4、l.voltageandcurrent(dv/dtanddi/dt).IftheseareOnceathyristorhasbeentriggered,thetriggercurrentcanexceeded,thethyristormaybedamagedordestroyed.Onberemovedwithoutturningoffthedevice.theotherhand,itisimportanttoprovideatriggerpulseSiliconcontrolledrectifi
5、ers(SCRs)andtriacsarebothlargeenoughandfastenoughtoturnthegateonquicklymembersofthethyristorfamily.SCRsareunidirectionalandcompletely.Usuallythegatetriggercurrentshouldbeatleast50percentgreaterthanthemaximumratedgatedeviceswheretriacsarebidirectional.
6、AnSCRistriggercurrent.Thyristorsmaybedriveninmanydesignedtoswitchloadcurrentinonedirection,whileadifferentways,includingdirectlyfromtransistorsorlogictriacisdesignedtoconductloadcurrentineitherfamilies,powercontrolintegratedcircuits,bydirection.optois
7、olatedtriacdrivers,programmableunijunctionStructurally,allthyristorsconsistofseveralalternatingtransistors(PUTs)andSIDACs.TheseandotherdesignlayersofoppositePandNsilicon,withtheexactstructureconsiderationsarecoveredinthismanual.varyingwiththeparticula
8、rkindofdevice.TheloadisOfinteresttoo,isanewlineofThyristorSurgeappliedacrossthemultiplejunctionsandthetriggerSuppressorsinthesurfacemountSMBpackagecoveringcurrentisinjectedatoneofthem.Thetriggercurrentsurgecurrentsof50,80and100amps,withbreakov
