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ID:33189539
大小:3.80 MB
页数:71页
时间:2019-02-21
《The Source_Drain Engineering of Nanoscale Germanium-based MOS Devices (2016)》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、SpringerThesesRecognizingOutstandingPh.D.ResearchZhiqiangLiTheSource/DrainEngineeringofNanoscaleGermanium-basedMOSDevicesSpringerThesesRecognizingOutstandingPh.D.ResearchAimsandScopeTheseries“SpringerTheses”bringstogetheraselectionoftheverybestPh.D.thesesfromaroundtheworldandacrossthephysicalsc
2、iences.Nominatedandendorsedbytworecognizedspecialists,eachpublishedvolumehasbeenselectedforitsscientificexcellenceandthehighimpactofitscontentsforthepertinentfieldofresearch.Forgreateraccessibilitytonon-specialists,thepublishedversionsincludeanextendedintroduction,aswellasaforewordbythestudent’ss
3、upervisorexplainingthespecialrelevanceoftheworkforthefield.Asawhole,theserieswillprovideavaluableresourcebothfornewcomerstotheresearchfieldsdescribed,andforotherscientistsseekingdetailedbackgroundinformationonspecialquestions.Finally,itprovidesanaccrediteddocumentationofthevaluablecontributionsma
4、debytoday’syoungergenerationofscientists.Thesesareacceptedintotheseriesbyinvitednominationonlyandmustfulfillallofthefollowingcriteria•TheymustbewritteningoodEnglish.•ThetopicshouldfallwithintheconfinesofChemistry,Physics,EarthSciences,EngineeringandrelatedinterdisciplinaryfieldssuchasMaterials,Nan
5、oscience,ChemicalEngineering,ComplexSystemsandBiophysics.•Theworkreportedinthethesismustrepresentasignificantscientificadvance.•Ifthethesisincludespreviouslypublishedmaterial,permissiontoreproducethismustbegainedfromtherespectivecopyrightholder.•Theymusthavebeenexaminedandpassedduringthe12monthsp
6、riortonomination.•Eachthesisshouldincludeaforewordbythesupervisoroutliningthesignifi-canceofitscontent.•Thethesesshouldhaveaclearlydefinedstructureincludinganintroductionaccessibletoscientistsnotexpertinthatparticularfield.Moreinformationaboutthisseriesathttp://www.springer.com/series/8790Zhiqiang
7、LiTheSource/DrainEngineeringofNanoscaleGermanium-basedMOSDevicesDoctoralThesisacceptedbyPekingUniversity,Beijing,China123AuthorSupervisorsDr.ZhiqiangLiProf.XingZhangInstituteofMicroelectronicsInstituteofMicroelectronicsPekingUnive
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