欢迎来到天天文库
浏览记录
ID:28575436
大小:10.49 MB
页数:110页
时间:2018-12-11
《zno:al透明导电薄膜的自由基辅助磁控溅射制备工艺及性能表征》由会员上传分享,免费在线阅读,更多相关内容在应用文档-天天文库。
1、摘要(1)金属Zn溅射靶材表面氧化状态的改变是引起溅射工艺不稳定的主要原因。样品鼓转速的变化可以改变真空室内的氧气分布,引起靶材表面状态的改变,从而导致放电电压的变化。(2)AZO薄膜的透过率与薄膜的氧化程度密切相关,而Al的有效掺杂是决定AZO薄膜导电性的重要影响因素:AZO薄膜载流子迁移率的大小取决于薄膜的中性杂质浓度的大小。(3)利用磁控溅射获得的AZO薄膜,在氢气气氛中经550oC退火处理后,样品的电阻率达到6.45×10。4Q·cm,550nm波长的透射率达到85.7%,达到了可实用的技术指标。关键词:透明导电薄膜、ZnO:AI、AZO
2、、载流子浓度、迁移率、中性杂质散射、掺杂效率、退火处理IIAbstractAbstractTransparentconductiveZnO:A!(AZO)filmwasusedinthefieldsofsolarcellsandflatpaneldisplay,becauseofitsexcellentelectricalandopticalproperties.AZOfilm,withtheadvantagesofcheapandabundantrawmaterials,andnon-toxic,isconsideredtobethebestc
3、andidatesforsubstitutingITOfilms.Radicalassistedmagnetronsputteringcoater(RASforshort)isanewtypeofcoater.ARAShastheadvantagesofhighdepositionrate,lowCOStandmassproductionability.Therefore,studiesonthefabricationprocessesofAZOfilmsareveryimportantforindustrialapplications.This
4、dissertationstudiedtheinfluencesoftargets,oxygenpartialpressure,A1content,sputteringpowerandpost-annealingtreatmentonthepropertiesofAZOfilms.ProcessparametersoffabricatingAZOfilmsbyR.ASwerestudied,andtheobtainedAZOfilmswerecharacterized.Thedissertationconsistsoffivechapters:I
5、nChapter1,transparentconductivefilmsandtheresearchhistorywerebrieflyintroduced.MethodsoffabricatingZnO:AIfilmsandtheadvantagesofAZOfilmsdepositedbyRASalsoweregiven.Factorswhichaffectingthestabilityofdischargevoltageduringdepositionprocesseswerealsointroduced.InChapter2,weintr
6、oducedthebasicprincipleandmainparametersoftheRASsputteringcoater,aswellasthedepositionparametersofAZOsamples.Thevariouscharacterizationtechniques,includingXRD、SEM、XRF、UV-Vis—IR、XPS、VanderPauwmethodetc.werealsointroducedInChapter3,effectsofoxygenflowrateonthedischargevoltageof
7、ZntargetandA1target,andtherotationspeedofthesampledrumonthestabilityofdischargevoltagewerestudied.InChapter4,theprocessesoffabricatingAZOfilmsbyZnandAItargetswerestudied.TheeffectsofAIcontent,oxygenpartialpressure(bychangingtheArflowrateoroxygenflowrate)andpost-annealingtreat
8、mentontheelectricalandopticalpropertiesofAZOfilmswereinvestigated.ⅡI
此文档下载收益归作者所有