功率mosfet的辐射效应的研究

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1、功率MOSFET的辐射效应的研究

2、第1Abstract：TheelectricalcharacteristicsofsolidstatedevicessuchasBJT(BipolarJunctionTransistor)andMOSFET,etc,arealteredbyimpingingphotonradiationandtemperatureinthespaceenvironment.Inthispaper,thethresholdvoltageandbreakdoentalresultsshoayalsoinduceionizationsothatexc

3、esscarriersaregeneratediconductormaterialanddevice.Thephotonradiationconsistsofgraysand/orx-rays.Theunitsprimarilyusedinradiationeffects,ountofradiationofmaterial.il-Std-883Method1019.Thegsourceusing60CoisusedforthetestofmercialIR(InternationalRectifier)MOSFETproducts.Thesamplesizeof

4、testingis6piecesforeachtest.Fig.1to5shoouseg(this)">Fig.1.Thresholdvoltage(Vth)characteristicsofaMOSFET(200V).TheslopeofthethresholdvoltageinFig.3forthedoserate4.97[rad/sec]forMOSFET(100[V])isnotsteeperthanthatofMOSFET(200[V]).Thebreakdoetinimum200[V],and100[V],respectively.Thebreakd

5、oitring,forachievingbreakdopledevicehaveanenoughmarginforthechargeaccumulationoccurredouseg(this)">Fig.2.ThresholdvoltagecharacteristicsofaMOSFET(200V).500)this.style.ouseg(this)">Fig.3.ThresholdvoltagecharacteristicsofaMOSFET(100V).500)this.style.ouseg(this)">Fig.4.Breakdoouseg(this

6、)">Fig.5Breakdoentshoercialproductsarerobustinthebreakdopf,andP.Calvel,“ApplicationofTestMethod1019.4toNon-hardenedPoiconductors”,IEE,SavoyPlace,Londonen,Univ.ofNeitingRingforImprovingCornerBreakdoC98,Prague,Czech,pp.41-44,1998.