4h-sic厚外延的生长研究

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1、目录目录第一章绪论.....................................................................................................................11.1半导体材料SiC.................................................................................................11.2SiC厚外延的研究意义和现状..........................................

2、................................31.2.1SiC厚外延的研究意义...........................................................................31.2.2SiC厚外延的研究现状...........................................................................41.2.3SiC厚外延存在的问题..............................................................

3、.............51.3本论文的主要工作............................................................................................6第二章SiC晶体同质外延及表征..................................................................................72.1SiC晶体结构.....................................................................

4、.................................72.2SiC同质外延方法..............................................................................................92.2.1分子束外延法.......................................................................................102.2.2液相外延法............................................

5、...............................................112.2.3化学气相淀积法...................................................................................122.3SiC外延层的表征方法....................................................................................132.3.1显微表征方法......................................

6、.................................................132.3.2拉曼表征方法.......................................................................................162.3.3X射线衍射............................................................................................172.3.4C-V表征..............................

7、..................................................................182.4本章小结..........................................................................................................20第三章4H-SiC外延设备、工艺及测厚方法..........................