ic工艺技术2-_光刻

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1、IC工艺技术系列讲座第二讲PHOTOLITHOGRAPHY光刻讲座提要1.General2.Facility(动力环境)3.Mask(掩膜版)4.Processstephighlight(光刻工艺概述)5.BCD正胶工艺6.Historyand未来的光刻工艺1.GeneralMASKINGProcess(光刻工艺)Photolithography(光学光刻)----Transferatemporarypattern(resist)DefectcontrolCriticaldimensioncontrolAlignmentaccuracy

2、CrosssectionprofileEtch(腐蚀)----Transferapermanentpattern(Oxide,Nitride,Metal…)2.0FacilityrequirementTemperature(温度)70oFHumidity(湿度)45%Positivepressure(正压)>0.02in/HO2Particlecontrol(微粒)Class100Vibration(震动)Yellowlightenvironment(黄光区)DIwater(去离子水)17mhomCompressaira

3、ndNitrogen(加压空气,氮气)Inhousevacuum(真空管道)3.0Mask(掩膜版)DesignPGtapeMaskmaking•Plate---quartz,LEglass,Sodalineglass•Coating---Chrome,Ionoxide,Emulsion•Equipment---E-beam,PatterngeneratorMaskstorage---AntistaticBoxPelliclePellicleprotection4.0光刻工艺概述1.PrebakeandHMDS(前烘)2.Res

4、istcoating(涂胶)EBR(去胶边),softbake,3.Exposure(曝光)Alignment(校正)4.Develop(显影)Poste-bake,Hardbake,backsiderinse5.Developinspection(显检)4.1PrebakeandHMDStreatmentPurposeofPre-bakeandHMDStreatmentistoimprovetheresistadhesiononoxidewafer.HMDSisadhesionpromoterespeciallydesignedforp

5、ositiveresist.HMDS(Hexamethyldisilane)canbeappliedonthewafersby1.Vaporinabucket2.vaporinavacuumbox3.Directlydispenseonwafer4.YESsystem---inahotvacuumsystem5.Vaporinahotplate(withexhaust)ToomuchHMDSwillcausepoorspin,viceversawillcauseresistlifting4.2ResistCoating(涂胶)Resist

6、coatingspecification(指标）Thickness（厚度）0.7u–2.0u(3.0以上forPadlayer)Uniformity（均匀度）+50A–+200ASizeofEBR（去胶边尺寸）Particle（颗粒）<20perwaferBacksidecontamination(背后污染）三个主要因数影响涂胶的结果1.ResistProduct(产品）Viscosity（粘度）2.SpinnerDispensemethod（涂胶方法）Spinnerspeed(RPM)（转速）Exhaust（排气）Softba

7、ketemperature（烘温）3.FacilityTemperature（室温）Humility（湿度）4.2.1Coater(涂胶机）EquipmentmoduleandspecialfeaturePre-bakeandHMDS---Hot/ColdplateResistdispense---ResistpumpRPMaccuracy---MotorEBR---Top/bottomHotplate---softbaketemperatureaccuracyExhaustWastecollectionTemperatu

8、re/HumiditycontrolhoodTransfersystem---ParticleandreliabilityProcessstepandprocessprogram---Fl