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时间:2017-11-12
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1、CHAPTER4CarrierTransportandExcessCarrIerPhenomenaThedriftvelocityversuselectricfieldcharacteristicofgalliumarsenideismorecomplicatedthanforsiliconorgermanium.Atlowfields,theslopeofthedriftvelocityversus-fieldisconstantandisthclow-fieldelectronmobility,whichbapproximately8500forgalli
2、umarsenide.Thelow-fieldelectronmobilityingalliumarsenideismuchlargerthaninsilicon.Asthefieldincreases,theelectrondriftvelocityingalliumarsenidereachesapeakandthendecreases.Adifferentialmobilityistheslopeoftheversus-fieldataparticularpointonthecurveandthenegativeslopeofthedriftveloci
3、tyversuselectricfieldrepresentsanegativediffer-entialmobility.Thenegativedifferentialmobilityproducesanegativedifferentialresistance;thischaracteristicisusedinthedesignofoscillators.NegativedifferentialThenegativedifferentialmobilitycanbeunderstoodbyconsideringtheEversusMobilitydiag
4、ramforgalliumarsenide,whichisshownagaininFigure4.8.ThedensityofStateseffectivemassoftheelectroninthelowervalleyisThesmalleffectivemassleadstoalargemobility.Asthe-fieldincreases,theenergyoftheelectronincreasesandtheelectroncanbescatteredintotheuppervalley,wheretbedensityofstateseffec
5、tivemassis.Thelargereffectivemassintheuppervalleyyieldsasmallermobility.Thisintervalleytransfermechanismresultslnade-creasingaveragedriftvelocityofelectronswithelectricfield,orthenegativediffer-entialmobilitycharacteristic.Figure4.8
6、Energy-bandstructureforgalliumarsenideshowingtheup
7、pervalleyandlowervalleyintheconductionband.(FromSze[15])TYU4.1Adriftcurrentdensityofisrequiredinasendconductordeviceusingn-typesiliconwithanappliedelectricfieldof=25V/cm.Determinetheimpuritydopingconcentrationthatwillachievethisspecification.(Ans.if,then)TYU4.2SiliconatT=300Kisdoped
8、withimpuritydopingconcentrationsofand.(a)Whataretheelectronandholemobilities?(b)Determinetheresistivityandconductivityofthematerial.[Ans.(a),;(b),]TYU4.3RepeatTYU4.1forGaAs.(Ans.If,then)TYU4.4RepeatTYU4.2fOrGaAs.[Ans.(a),;(b),]4.2ICARRIERDIFFUSIONObjective:Describethemechanismofcarr
9、ierdiffusionanddiff
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