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1、------------------------------------------------------------------------------------------------溅射功率对掺铝氧化锌薄膜光电学性质的影响第24卷 第5期2008年9月福建师范大学学报(自然科学版)JournalofFujianNormalUniversity(NaturalScienceEdition)Vol.24 No.5Sept.2008文章编号:1000-5277(2008)05-0044-05范丽琴,裴
2、瑜,林丽梅,詹仁辉,赖发春*(福建师范大学物理与光电信息科技学院,福建福州 350007) 摘要:利用射频磁控溅射在BK-7玻璃基片上沉积掺铝氧化锌薄膜,研究溅射功率对薄膜光电性能的影响.当溅射功率从250W增加到400W时,X射线衍射的结果发现,250W制备的薄膜只有(002)衍射峰,而300W以上的样品则出现了新的(101)衍射峰;而且随着溅射功率的增加,(002)峰的强度减弱,(101)峰的强度增强.薄膜的厚度随溅射功率的增加而变厚,电阻率随溅射功率的增加而减小,从200W功率时的24.6×10-4
3、??cm减小到400W时的7.2×10-4??cm.样品在可见光区域的平均光学透射率都大于85%,其光学带隙随载流子浓度的减小而减小.关键词:掺铝氧化锌薄膜;溅射功率;电学性质;光学性质中图分类号:O484文献标识码:AInfluenceofSputteringPowerontheOpticaland——————————————————————————————————————-------------------------------------------------------------------
4、-----------------------------ElectricalPropertiesofZnO:AlFilmsFANLi-qin,PEIYu,LINLi-mei,ZHANRen-hui,LAIFa-chun*(SchoolofPhysicsandOptoElectronicsTechnology,FujianNormalUniversity,Fuzhou350007,China)Abstract:TransparentconductingAluminium-dopedzincoxide(ZnO
5、:Al)filmsweredepositedonBK-7glasssubstratesbyradiofrequencymagnetronsputtering.Sputteringpowerchangedfrom250Wto400Wandthesubstratetemperaturewas250℃.XRDresultsshowthatthefilmdepositedat250Wshowsonly(002)peak,andthefilmsdepositedatthepowerlargerthan300Wshow
6、both(002)and(101)peaks.Moreover,theintensityof(002)peakdecreasesastheincreaseofsputteringpower,buttheintensityof(101)peakin-creaseswithincreasingsputteringpower.Boththefilmthicknessandcarriermobilityin-creaseastheincreaseofsputteringpower.Theresistivityoft
7、hefilmdecreasesfrom24.6×10-4??cmto7.2×10-4??cmasthesputteringpowerincreasesfrom250Wto400W.Theav-eragetransmittanceatvisiblespectralregionforallsamplesislargerthan85%.Theopticalbandgapdecreaseswithdecreasingcarrierconcentration.—————————————————————————————
8、—————————------------------------------------------------------------------------------------------------Keywords:Aluminium-dopedzincoxidefilm;sputteringpower;electricalproperties;opticalproperties透明导电薄膜已经广泛应
