ic制程专有名词解析目录_final

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1、Area页次英文名称中文名称PEI1ActiveArea主动区（工作区）PH2ACETONE丙酮PH3ADI显影后检查ET4AEI蚀刻后检查PT5AIRSHOWER空气洗尘室PH6ALIGNMENT对准DF7ALLOY/SINTER熔合TF8AL/SI铝/硅靶TF9AL/SI/CU铝/硅/铜TF10ALUMINUN铝TF11ANGLELAPPING角度研磨TF12ANGSTRON埃TF13APCVD（ATMOSPRESSURE）常压化学气相沉积DF14AS75砷ET15ASHING，STRIPPING电浆光阻去除PEI16ASSEMBLY晶粒封装PEI17BACKGRINDING晶

2、背研磨PH18BAKE,SOFTBAKE,HARDBAKE烘烤，软烤，硬烤DF19BF2二氟化硼DF20BOAT晶舟ET21B.O.E二氧化硅蚀刻液PEI22BONDINGPAD焊垫DF23BORON硼TF24BPSG含硼及磷的硅化物PEI25BREAKDOWNVOLTAGE崩溃电压PEI26BURNIN预烧试验PEI27CAD计算机辅助设计PH28CDMEASUREMENT微距量测ET29CH3COOH醋酸TF30CHAMBER真空室,反应室PEI31CHANNEL信道PEI32CHIP,DIE晶粒PEI33CLT（CARRIERLIFETIME）载子生命周期PEI34CMOS互

3、补式金氧半导体PH35COATING光阻覆盖ET36CROSSSECTION横截面PEI37C-VPLOT电容,电压图QA38CWQC全公司品质管制PT39CYCLETIME生产周期时间PT40CYCLETIME生产周期时间PEI41DEFECTDENSITY缺点密度PH42DEHYDRATIONBAKE去水烘烤DF43DENSIFY密化ET44DESCUM电浆预处理PEI45DESIGNRULE设计规范PEI46EDSIGNRULE设计准则DF48DIFFUSION扩散DF49DIWATER去离子水DF50DOPING参入杂质PEI51DRAM,SRAM动态,静态随机存取内存DF

4、52DRIVEIN驱入PH53E-BEAMLITHOGRAPHY电子束微影技术PEI54EFR（EARLYFAILURERATE）早期故障率PEI55ELECTROMIGRATION电子迁移PEI56ELECTRON/HOLE电子/电洞DF57ELLIPSOMETER椭圆测厚仪PEI58EM（ELECTROMIGRATIONTEST）电子迁移可靠度测试ET59ENDPOINTDETECTOR终点侦测器DF60ENERGY能量DF61EPIWAFER磊晶芯片PEI62EPROM(ERASABLE-PROGRAMMABLEROM）电子可程序只读存储器PEI63ESDELECTROSTA

5、TICDAMAGEELECTROSTATICDISCHARGE静电破坏静电放电ET64ETCH蚀刻PH65EXPOSURE曝光PT66FABRICATION（FAB）制造PEI67FBFC（FULLBITFUNCTIONCHIP）全功能芯片PEI68FIELD/MOAT场区DF69FILTRATION过滤PEI70FIT（FAILUREINTIME）PEI71FOUNDRY客户委托代工PEI72FOURPOINTPROBE四点侦测ET73MEGASONICCLEAN超音波清洗TF74FTIR傅氏转换红外线光谱分析仪PEI75FTY（FINALTESTYIELD）最终测试良率PEI7

6、6FUKEDEFECTDF77GATEOXIDE闸极氧化层PEI78GATEVALVE闸阀PEI79GEC（GOODELECTRICALCHIP）优良电器特性芯片PEI80GETTERING吸附PH81G-LINEG-光线PH82GLOBALALIGNMENT整片性对准与计算PEI83GOI（GATEOXIDEINTEGRITY）闸极氧化层完整性TF84GRAINSIZE颗粒大小QA85GRRSTUDY(GAUGEREPEATABILITYANDREPRODUUCIBILITY）测量仪器重复性与再现性之研究ET86H2SO4硫酸DF87H3PO4磷酸ET88HCL氯化氢（盐酸）ET

7、89HEPA高效率过滤器TF90HILLOCK凸起物PH91HMDS双三甲基硅铵DF92HNO3硝酸PEI93HOTELECTRONEFFECT热电子效应PH94I-LINESTEPPERI-LINE步进对准曝光机DF95IMPURITY杂质PEI96INTEGRATEDCIRCUIT（IC）集成电路DF97IONIMPLANTER离子植入机DF98IONIMPLANTATION离子植入ET99ISOTROPICETCHING等向性蚀刻PEI100ITY（INTEGR