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1、集美大学毕业设计林程20108850060基于SilvacoTCAD的4H-SiC功率BJT器件仿真[摘要]碳化硅(SiC)作为第三代半导体材料的代表,由于具有宽禁带、高击穿电场、高热导率等优异特性,使其在高温、大功率、高频、抗辐射等领域应用前景广阔,其研究广为关注。在商用的SiC材料中,4H-SiC具有更高的体迁移率和更低的各向异性,使其更具优势。大功率4H-SiCBJT是非常具有竞争力的器件种类,可以广泛应用于诸如航空航天、机车牵引、高压直流输电设备、混合动力车辆等国计民生的重要领域。然而,4H-SiCBJT较低的击穿电压、低的共发射极
2、电流增益、较低的频率响应以及较差的可靠性限制了其在功率系统领域的发展,也使得在这一方面的研究成为热点。本文首先完善了碳化硅新材料在仿真器Silvaco-TCAD中的物理模型,这包括迁移率模型、禁带宽度变窄模型、杂质不完全离化模型、碰撞电离模型、SRH产生一复合模型与俄歇复合模型等。然后,讨论了4H-SiCBJT器件制作的工艺流程,并对关键工艺如欧姆接触工艺、刻蚀工艺以及离子注入工艺等进行了简要的介绍。研究结果表明,仿真器可以正确的模拟碳化硅新材料特性,提出的结构击穿电压由于在结终端处做了优化的终端处理和采用缓冲漂移层,具有更高的耐压能力,更
3、低的功耗和反向泄露电流;采用的P型薄层基区加速了少子在基区的运动,提高了电流增益,所设计结构更能适用于大功率电力电子系统应用。[关键词]4H-SIC功率BJT器件物理Silvaco-TCAD集美大学毕业设计林程20108850060Researchon4H-SICPowerBJTDevieeSimulationLinChengNO.2010850060，Electronicscienceandtechnology,2014InformationEngineeringCollegeofJimeiUniversityAbstract:Asthe
4、representativeofthethirdgenerationsemiconductormaterial,SiliconCarbide(SiC)isthepromisingcandidateinapplicationofhightemperature,highpower,highfrequency,anti-radiationfieldsbecauseofitsexcellentpropertiessuchaswide-bandgap,highbreakdownfield,highthermalconductivity.Amongth
5、ecommerciallyavailableSiCtypes,4H-SiCisthemostattractiveoneduetoitshigherbulkmobility,loweranisotropy.Continuousresearchhasbeendonethroughpastdecades.Highpower4H-SiCBJTisverycompetitiveinpowerdevicefamily,whichiswidelyappliedinbothmilitaryandcivilianusesuchasaerospace,trac
6、tion,HVDCfacility,HEV.However,thelowblockingvoltage,lowcurrentgain,lowfrequencyresponseandweakreliabilityof4H-SiCBJTrestrictitsapplicationinpowersystem.Firstly,thephysicsmodelsofnewmaterialsinsimulatorSilvaco-TCADwereimprovedinthepaper,includingmobilitymodel,band-gapnarrow
7、ingmodel,dopingincompleteionizationmodel,impactionizationmodel,SRHandAugergeneration-recombinationmodel;thesimulationcanbedonesuccessfullyundertheaccuratephysicsmodels.Thentheprocessflowwasdiscussed,criticalprocessessuchasOhmiccontact,patternetchprocessandionimplantationar
8、ealsobeendiscussed.ResearchresultsindicatethatthesimulatorisaccuratetosimulatetheSiCmater
