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1、Chin.Phys.BVol.26,No.1(2017)017202Improvedthermoelectricperformanceinp-typeBi0.48Sb1.52Te3bulkmaterialbyaddingMnSbSe24BingleiCao(曹丙垒)1,2,JikangJian(简基康)1,†,BinghuiGe(葛炳辉)2,ShanmingLi(李善明)2,HaoWang(王浩)2,JiaoLiu(刘骄)1,HuaizhouZhao(赵怀周)2,‡1PhysicsandOptoelectronicsEngineeringCollege,G
2、uangdongUniversityofTechnology,Guangzhou510006,China2BeijingNationalLaboratoryforCondensedMatterPhysics,InstituteofPhysics,ChineseAcademyofSciences,Beijing100190,China(Received13September2016;revisedmanuscriptreceived26October2016;publishedonline22December2016)Bismuthtelluride(Bi2T
3、e3)basedalloys,suchasp-typeBi0.5Sb1.5Te3,havebeenleadingcandidatesfornearroomtemperaturethermoelectricapplications.Inthisstudy,Bi0.48Sb1.52Te3bulkmaterialswithMnSb2Se4werepreparedusinghigh-energyballmillingandsparkplasmasintering(SPS)process.TheadditionofMnSb2Se4toBi0.48Sb1.52Te3in
4、creasedtheholeconcentrationwhileslightlydecreasingtheSeebeckcoefficient,thusoptimisingtheelectricaltransportpropertiesofthebulkmaterial.Inaddition,thesecondphasesofMnSb2Se4andBi0.48Sb1.52Te3wereobservedintheBi0.48Sb1.52Te3matrix.Thenanoparticlesinthesemi-coherentsecondphaseofMnSb2Se
5、4behavedasscatteringcentresforphonons,yieldingareductioninthelatticethermalconductivity.Substantialenhancementofthefigureofmerit,ZT,hasbeenachievedforBi0.48Sb1.52Te3byaddinganMn0.8Cu0.2Sb2Se4(2mol%)sample,forawiderangeoftemperatures,withapeakvalueof1.43at375K,correspondingto40%impr
6、ovementoveritsBi0.48Sb1.52Te3counterpart.Suchenhancementofthethermoelectric(TE)performanceofp-typeBi2Te3basedmaterialsisbelievedtobeadvantageousforpracticalapplications.Keywords:Bi0.48Sb1.52Te3,thermoelectricmaterials,semi-coherentsecondphase,ZTenhancementPACS:72.15.JF,74.25.fgDOI:
7、10.1088/1674-1056/26/1/0172021.Introductionals.Xieetal.reportedahighZTof1.56inBi0.52Sb1.48Te3alloysusingmeltspinning.[8]Zhengetal.obtainedaZTDirectheat-electricityconversionisanimportantresearchof1.22forBi0.5Sb1.5Te3viaplasma-activatedsintering(MS-topic.Inparticular,thermoelectrics
8、(TE)haveattractedin-PAS)at
