SST39VF800(外部FLASH芯片,1MB容量)

SST39VF800(外部FLASH芯片,1MB容量)

ID:43485897

大小:393.77 KB

页数:24页

时间:2019-10-08

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1、8Megabit(512Kx16-Bit)Multi-PurposeFlashSST39VF800Q/SST39VF800AdvanceInformationFEATURES:•Organizedas512KX16•LatchedAddressandData•Single2.7-3.6VReadandWriteOperations•FastSectorEraseandWordProgram:1•VDDQPowerSupplytoSupport5VI/O-SectorEraseTime:18ms(typical)forS

2、ST39VF800Q-BlockEraseTime:18ms(typical)-ChipEraseTime:70ms(typical)2-VDDQnotavailableonSST39VF800-WordProgramtime:14µs(typical)•SuperiorReliability-ChipRewriteTime:8seconds(typical)-Endurance:100,000Cycles(typical)•AutomaticWriteTiming3-Greaterthan100yearsDataRe

3、tention-InternalVPPGeneration•LowPowerConsumption:•EndofWriteDetection-ActiveCurrent:15mA(typical)4-ToggleBit-StandbyCurrent:3µA(typical)-Data#Polling-AutoLowPowerMode:3µA(typical)•CMOSI/OCompatibility•SmallSectorEraseCapability(256sectors)5-Uniform2KWordsectors

4、•JEDECStandard•BlockEraseCapability(16blocks)-FlashEEPROMPinoutsandcommandsets-Uniform32KWordblocks•PackagesAvailable6•FastReadAccessTime:-48-PinTSOP(12mmx20mm)-6x8BallTFBGA-70and90ns7PRODUCTDESCRIPTIONherentlyuselessenergyduringEraseandProgramthanalternativefla

5、shtechnologies.Thetotalenergycon-TheSST39VF800Q/VF800devicesare512Kx168sumedisafunctionoftheappliedvoltage,current,andCMOSMulti-PurposeFlash(MPF)manufacturedwithtimeofapplication.Sinceforanygivenvoltagerange,theSST’sproprietary,highperformanceCMOSSuperFlashSuper

6、Flashtechnologyuseslesscurrenttoprogramandtechnology.Thesplit-gatecelldesignandthickoxidehasashortererasetime,thetotalenergyconsumed9tunnelinginjectorattainbetterreliabilityandduringanyEraseorProgramoperationislessthanmanufacturabilitycomparedwithalternateapproa

7、ches.alternativeflashtechnologies.TheSST39VF800Q/TheSST39VF800Q/VF800write(ProgramorErase)VF800alsoimproveflexibilitywhileloweringthecostfor10witha2.7-3.6Vpowersupply.TheSST39VF800Q/program,data,andconfigurationstorageapplications.VF800conformtoJEDECstandardpino

8、utsforx16memories.TheSuperFlashtechnologyprovidesfixedEraseand11Programtimes,independentofthenumberofErase/Featuringhighperformancewordprogram,theProgramcyclesthathav

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