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时间:2019-09-20
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1、金属前介质层(PMD)金属间介质层(IMD)W塞(WPLUG)钝化层(Passivation)acceptor受主,如B,掺入Si屮需要接受电子Acid:酸actuator激励ADIAfterdevelopinspection显影后检视AEIAfteretchinginspection蚀科后检查AFMatomicforcemicroscopy原子力显微ALDatomiclayerdeposition原子层淀枳Alignmark(key):对位标记Alignment排成一直线,对平Alloy:合金Alumin
2、um:铝Ammonia:氨水Ammoniumfluoride:NHFAmmoniumhydroxide:NHOHAmorphoussilicon:(」-Si,非品硅(不是多品硅)amplifier放大器AMU原了质量数Analog:模拟的analyzermagnet磁分析器Angstrom:A(E-m)埃Anisotropic:各向异性(如POLYETCH)Antimony(Sb)Warcchamber起弧室ARC:anti-reflectcoating防反射层Argon(Ar)MArsenictrioxi
3、de(AsO)三氧化二神Arsenic(As)神Arsine(AsH)ASHER一种十法刻蚀方式Asher:去胶机ASI光阻去除后检查ASIC特定用途集成电路Aspectration:形貌比(ETCH中的深度、宽度比)ATE自动检测设备Backend:后段(CONTACT以后、PCM测试前)BacksideEtch背面蚀亥ljBackside晶片背面Baseline:标准流程Beam-Current电了束电流Benchmark:基准BGAballgridarray高脚封装Cassette装晶片的晶舟CD:c
4、riticaldimension关键性尺寸,临界尺寸Chamber反应室Chart图表Childlot子批chiller制冷机Chip(die)晶粒Chip:碎片或芯片。clamp夹了CMP化学机械研磨Coater光阻覆盖(机台)Coating涂布,光阻覆盖Computer-aideddesign(CAD):计算机辅助设计ContactHole接触窗ControlWafer控片Correlation:相关性。Cp:工艺能力,详见processcapabilityoCriticallayer重要层CVD化学气
5、相淀积Cycletime生产周期Defectdensity:缺陷密度。单位面积内的缺陷数Defect缺陷DEPdeposit淀积Depthoffocus(DOF):焦深。Descum预处理Developer显影液;显影(机台)developer:I)显影设备;II)显影液Development显影DGdualgate双门DIfilter离子交换器DIwater去离子水Diffusion扩散disk靶盘disk/flagfaraday束流测量器Doping掺杂Dose剂量Downgrade降级DRCdesig
6、nrulecheck设计规则检查DryClean干洗Duedate交期Dummywafer挡片E/Retchrate蚀刻速率EE设备工程师亠ELSextendedlifesource高寿命离了源enclosure夕卜壳ICPinductivecoupleplasma感应等离子体ID辨认,鉴定IGBT绝缘门双极晶体管images:去掉图形区域的版implant注入Implant植入impurityn掺朵impurity:杂质inductivecoupledplasma(ICP):感应等离了体inertgas:
7、惰性气体initialoxide:一氧insulator:绝缘isolatedline:隔离线junction结junctionspikingn铝穿刺kerf划片槽landingpadnPADLayer层次LDDlightlydopeddrain轻掺杂漏linerdrive直线往复运动lithographyn制版loadlockvalve靶盘腔装片阀Localdefocus局部失焦因机台或晶片造成之脏污LOCOSlocaloxidationofsilicon局部氧化Loop巡路Lot批LP(低压)淀积多晶硅
8、(LPPOLYmainframe主机maintainability,equipment设备产能maintenancen保养majoritycaniern多数载流子Mask(reticle)光罩masks,deviceseriesofn一成套光刻版materialn原料matrixn矩阵meann平均值measuredleakraten测得漏率mediann中间值memoryn记忆体Bipolar:双极Boat:扩
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