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1、半导体术语表第68页共68页A1stlevelpackaging第一级封装2ndlevelpackaging第二级封装aberration象差/色差absorption吸收accelerationcolumn加速管acceptor受主Accumulatev.积聚,堆积acid酸acousticstreaming声学流activeregion有源区activate激活activateddopant激活杂质activecomponent有源器件adsorption吸附aerosol悬浮颗粒airionizer空气电离化器alignmentmark对准标记alig
2、nment对准alloy合金半导体术语表第68页共68页alternateadj.交替的,轮流的,预备的v.交替,轮流,改变aluminum铝aluminumsubtractiveprocess铝刻蚀工艺ambient环境ammonia(NH3)氨气ammoniumfluoride(NH4F)氟化氨ammoniumhydroxide(NH4OH)氢氧化氨amorphous非晶的，无定型analog模拟信号angstrom埃anion阴离子anisotropicetchprofile各向异性刻蚀剖面anneal退火antimony(sb)锑antirelect
3、ivecoating(ARC)抗反射涂层APCVD常压化学气向淀积applicationspecificIC(ASIC)专用集成电路aqueoussolution水溶液areaarray面阵列argon（Ar）n.[化]氩半导体术语表第68页共68页arsenic(As)砷arsine(AsH3)砷化氢，砷烷ashing灰化，去胶aspectratio深宽比，高宽比aspectratiodependentetching(ARDE)与刻蚀相关的深宽比asphyxiant窒息剂assaynumber检定数atmosphericadj.大气的atmospheric
4、pressure大气压atmosphericpressureCVD(APCVD)常压化学气向淀积atomicforcemicroscopy(AFM)原子力显微镜atomicnumber原子序数attemptn.努力,尝试,企图vt.尝试,企图augerelectronspectroscopy(AES)俄歇电子能谱仪autodoping自掺杂automaticdefectclassification(ADC)缺陷自动分类Bback-endofline(BEOL)（生产线）后端工序backgrind减薄半导体术语表第68页共68页backingfilm背膜baf
5、flevt.困惑,阻碍,为难（挡片）baffleassemblyn.集合,装配,集会,集结,汇编（挡片块）ballgridarray(BGA)球栅阵列ballroomlayout舞厅式布局，超净间的布局barrelreactor圆桶型反应室barriermetal阻挡层金属barriervoltage势垒电压base基极，基区batch批bayandchaselayout生产区和技术夹层区beamblow-up离子束膨胀beamcurrent束流beamdeceleration束流减速beamenergy离子束能量beol（生产线）后端工序bestfocus
6、最佳聚焦BGA球栅阵列Biasing电压拉偏BICMOS双极CMOS半导体术语表第68页共68页bincodenumber分类代码号binmap分类图bipolarjunctiontransistor(BJT)双极晶体管bipolartechnology双极技术（工艺）bird’sbeakeffect鸟嘴效应blanketdeposition均厚淀积blower增压泵boat舟BOE氧化层刻蚀缓冲剂Bonvoyage[法]再见,一路顺风[平安]bondingpads压点bondingwire焊线，引线boron(B)硼borontrichloride(BCL
7、3)三氯化硼borontrifluoride(BF3)三氟化硼borophosphosilicateglass(BPSG)硼磷硅玻璃borosilicateglass(BSG)硼硅玻璃bottomantireflectivecoating(BARC)下减反射涂层boule单晶锭bracketn.墙上凸出的托架,括弧,支架v.括在一起半导体术语表第68页共68页breakthroughstep突破步骤，起始的干法刻蚀步骤brightfielddetection亮场检查brushscrubbing涮洗bubbler带鼓泡槽bufferedoxideetch(BO
8、E)氧化层腐蚀缓冲液bulkchemicaldist
