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时间:2019-08-04
《A memristor SPICE model for designing memristor circuits 》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、AMemristorSPICEModelforDesigningMemristorCircuitsMohammadMahvashAliceC.ParkerMingHsiehDepartmentofElectricalEngineeringMingHsiehDepartmentofElectricalEngineeringUniversityofSouthernCaliforniaUniversityofSouthernCaliforniaLosAngeles,CAUSALosAngeles,CAUSAEmail:mahvas
2、hm@usc.eduEmail:parker@usc.eduAbstract—Thememristor,acircuitelement,wasfirstpresentedbyLeonChuain1971.ThephysicalimplementationofthememristorwascreatedbyscientistsatHPLabsin2008andthecoupledvariableresistormodelwasproposed.HereweshowaSPICEmodelforsuchamemristorusing
3、dependentvoltagesources.Themodelisvalidatedbysimulatingsimplecircuitsandcomparingwiththeexpectedresults.TheproposedmodelmakesitpossibletodesignandsimulatememristorcircuitsusingSPICE.Wesimulatetwocircuits,alowpassfilterinwhichamemristorisinserieswitharesistorandanint
4、egratorcircuitwithoperationalamplifier.Theresultsarecomparedwithinductorcircuitsinwhichamemristorisreplacedbyaninductor.Thecomparisonshowsthatamemristorisactinglikeaninductorundercertainconditions.Sincethememristorhasgreatperformanceintermsofpowerdissipationandwithi
5、tsnanometersizetheremightbeapossibleapplicationofthememristortobeusedasaninductor.I.INTRODUCTIONFig.1.ThecoupledvariableresistormodelIn1971LeonChuapresentedthemissingcircuitelementthathecalledamemristor(memory+resistor)[1].Henotedpresentanotherpossibleapplicationof
6、thememristor,usingamongthesixpossiblecombinationsofthefourfundamentalthememristorasaninductorundercertainconditions.Wealsocircuitvariables,i,v,qand,fivehavewell-knownrelation-showtheuseofthememristorinanintegratorcircuitandinships.Twoofthemarethedefinitionofcurrenta
7、ndFaraday’salow-passfilter.lawandtherestaregivenbythethreecircuitelements,dvddqII.SPICEMODELOFAMEMRISTORresistor(R=),inductor(L=)andcapacitor(C=).dtdidvBasedonthesymmetry,heclaimedthereshouldbeaforthIntheSPICEmodelofamemristorpresentedhere,therefundamentalelementca
8、lledamemristorwhichisarelationisathinsemiconductorfilmthathastworegions,onewithabetweenchargeandmagneticflux(M=d).Althoughhehighconcentrationofdop
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