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1、PHYSICALREVIE%'8VOLUME49,NUMBER815FEBRUARY1994-IIMechanismofsubmonolayeroxideformationonsiliconsurfacesuponthermaloxidationV.D.Borman,E.P.Gusev,Yu.Yu.Lebedinski,andV.I.TroyanMoscowEngineeringPhysicsInstitute,Moscow115409,Russia(Received16June1992;revisedmanuscriptrecei
2、ved27September1993)WepresenttheresultsofanexperimentalandtheoreticalinvestigationoftheinitialoxidationofSi(100).Oxidationkineticsweremeasuredinrealtimebyx-ray-photoelectronspectroscopy.Inthepressureandtemperatureregimestudied,weobservedthefollowingkineticphenomena:adec
3、reaseoftheinitialoxidationratewithincreasingtemperature,kineticcurves(i.e.,coveragevstime)showingsat-urationwiththesaturationvalueincreaseforthehighertemperatures,andatransitionfrom"passive"to"active"oxidation.Toaccountfortheexperimentalresultsaphenomenologicalfirst-or
4、derphase-transitiontheorywasused.Oncomparingtheexperimentalandtheoreticalresults,wesuggestedaphys-icalmechanismforsubmonolayersiliconoxideformation.I.INTRODUCTIONphase;andcoexistenceoftheadsorbedphaseandoxide'o'~''2phaseduringsurfaceoxidegrowth.Therefore,wehavepresente
5、daphenomenologicaltheoryoffirst-Theinteractionofoxygenwiththesiliconsurfaceisoforderphasetransitions'(Sec.IVB)inordertoexplaingreatinterestfrombothafundamentalviewpointandtheexperimentalresults.Westudiedthegeneralcaseof'numeroustechnologicalapplications.However,oxideis
6、landgrowth.Thenweconsideredseverallimiting~"adespitemanypublicationsontheinitialoxidation,casesthatdependon(i)therelationshipbetweentheoxy-reasonablephysicalmechanismofsubmonolayeroxidegendeliverytimeandthephasetransformationtime,andformationhasyettobeproposed.Themaina
7、imofthis(ii)amechanismofoxygendeliverytotheisland(bypaperistoelucidatethemechanismofhigh-temperaturedirectimpingementorsurfacediffusion).Finally,amonginitialsiliconoxidation.allpossiblecaseswefoundtheoneresponsibleforsiliconFollowingabriefdiscussionoftheexperimentalset
8、upoxidegrowth.Thetheoryhasanadvantagewhencom-andcoveragecalibrationprocedures(Sec.II)wereviewparedtoknownmodelsofthen
