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1、IEEETWNSACTIOSSOKELECTRONDEVICESVOL.ED-13,NO.1JANUARY,1966MultiplicationNoiseinUniformAvalancheDiodesR.J.McINTYRE,SENIORMEMBER,IEEEAbstract-AgeneralexpressionisderivedfromwhichMODELthespectraldensityofthenoisegeneratedinauniformlymultiplyingp-njunctioncanbecalculatedforany
2、distribu-Weconsiderareversebiasedn-pjunctionhavingtionofinjectedcarriers.Theanalysisislimitedtotheadepletionlayerofwidthw.TheelectricfieldEwhitenoisepartofthenoisespectrumonly,andtodiodescanbeofarbitraryprofile,provideditissuffi-havinglargepotentialdropsacrossthemultiplyin
3、gregionofcientlyhighinpartofthedepletionlayertocausethedepletionlayer.Itisshownforthespecialcaseinwhichp=kcu,wherekisaconstantandcuand0aretheionizationimpactionization.Weassumethatelectronsandcoefficientsofelectronsandholes,respectively,thattheholestraversingthedepletionla
4、yerhaveionizationnoisespectraldensityisgivenbyprobabilitiesperunitlengthequaltoaandp,respectively,whicharefunctionsofonlytheelectricfieldE.Althoughthisistheusualassump-tion,itiswelltopointoutjustwhatitimplies.where2MisthecurrentmultiplicationfactorandZi,theMoreprecisely,th
5、eionizationprobabilityofaninjectedcurrent,iftheonlycarriersinjectedintothedeple-electronoraholeisafunctionofitsinstantaneoustionlayerareholes,andbymomentum.Acarriermovinginaconstantelectricfieldwillexperienceawholespectrumofmomentumvalueswhichcanbedescribedbyamomentumproba
6、bilitydistributionforthatparticularvalueiftheonlyinjectedcarriersareelectrons.AnexpressionisalsoderivedforthenoisepowerwhichwillbedeliveredtoofE.ItisonlywhenithasamomentumattheanexternalloadforthelimitM-+a.topendoftheprobabilitydistributionthatitiscapableofhavinganionizing
7、collision.Theassump-INTRODUCTIONtionthataorpisafunctionofEonlyandnotofthepreviouscarrierhistoryimpliesthattheECENTADVANCESintechnology[l],[2]momentumofanindividualcarrierwillsampleahavemadepossiblethefabricationofsemi-largenumberofvaluesthroughoutthewholemo-conductorp-njun
8、ctionswhichhavemoreormentumprobabilitydistributionwithinadistancelessuniformavalanchemult