berkley_半导体工艺讲义21--cmos基本结构

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1、EE143F05Lecture21BasicStructureofCMOSInverterProfessorNCheung,U.C.Berkeley1EE143F05Lecture21TheMOSISCMOSProcessMOSISisafoundryservicethatprovidesstandardCMOSfabricationP-wellCMOSProfessorNCheung,U.C.Berkeley2EE143F05Lecture21PatternmaskopeningForp-wellimp

2、lantShallowimplantationofboronDiffusiondrive-inToformp-wellinoxidizingambientRemovemaskingoxideProfessorNCheung,U.C.Berkeley3EE143F05Lecture21PadoxidegrowthandCVDSiN.34PatternfieldoxideregionsBlanketimplantofBoronforpchannelstopinsidep-wellProtectp-wellre

3、gionswithphotoresist.ImplantPhtoformnchannelstopoutsidep-wellregionsLOCOSOxidationThermaloxidationofgateSiO2ProfessorNCheung,U.C.Berkeley4EE143F05Lecture21CVDpoly-Si!!Patternpoly-SigatesProtectALLn-channeltransistorswithphotoresist.Boronimplantationtoform

4、source/drainofp-channeltransistorsandcontactstop-wellProfessorNCheung,U.C.Berkeley5EE143F05Lecture21ProtectALLp-channeltransistorswithphotoresist.Arsenicimplantationtoformsource/drainofn-channeltransistorsandcontactston-substrateCVDSiO2(Low-temperatureoxi

5、de)Patternandetchcontactopeningstosource/drain,wellcontact,andsubstratecontact.ProfessorNCheung,U.C.Berkeley6EE143F05Lecture21Metal1depositionPatternandetchMetal1interconnectsCVDSiO2ProfessorNCheung,U.C.Berkeley7EE143F05Lecture21Patternandetchcontactopeni

6、ngstoMetal1.Metal2deposition.Pattern,andetchMetal2interconnects.ProfessorNCheung,U.C.Berkeley8EE143F05Lecture213DviewofaCMOSinverteraftercontactetch.ProfessorNCheung,U.C.Berkeley9EE143F05Lecture21WellEngineeringP-tubN-tubTwinTubProfessorNCheung,U.C.Berkel

7、ey10EE143F05Lecture21TwinWellCMOSProcessFlowProfessorNCheung,U.C.Berkeley11EE143F05Lecture21RetrogradeWell-formedbyhighenergy(>200keV)implantationC(x)Conventionalwell(depthandprofilecontrolledbydiffusiondrive-in)Retrogradewell(depthandprofilecontrolledbyi

8、mplantationenergyanddose)xProfessorNCheung,U.C.Berkeley12EE143F05Lecture21ConventionalvsRetrogradeWell1)Verylowthermalbudgetforwellformation(noneedfordiffusiondrive-in)2)RetrogradeWellisformedAFTERfieldoxidation⇒sma