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1、EE143F05Lecture81)ImplantProfiledependsonlyonincidentionmomentum,NOTonchargestateA+SameSameimplantAmomentumprofileA-Note:KineticEnergy=(momentum)2/2M2)Chargecarriedbyionswillbeneutralizedbychargesinthesubstrateafterimplantation.3)n,p,Nd+,Na-chargesinsemicondu
2、ctorsarecausedbythechemistryoftheimplanteddopants,andareNOTrelatedtochargescarriedbytheions.ProfessorNCheung,U.C.Berkeley1EE143F05Lecture8KineticEnergyofMultipleChargedIonsacceleratingvoltage=xkVB+SinglyKineticEnergy=x·keVchargedP+As+DoublychargedB++KineticEn
3、ergy=2x·keVTriplyB+++KineticEnergy=3x·keVchargedProfessorNCheung,U.C.Berkeley2EE143F05Lecture8MolecularIonImplantationKineticEnergy=xkeVMolecularionwilldissociateimmediatelyintoatomiccomponentsBafterenteringasolid.BF+FAllatomiccomponents2Fwillhavesamevelocity
4、afterdissociation.acceleratingvoltage-=xkV+VelocityvB=vF=vF12K.E.ofB=m⋅vSolidBB2Surface12K.E.ofF=m⋅vBhas11amuFB2Fhas19amuK.E.ofB11≈=20%+K.E.ofBF11+19+192ProfessorNCheung,U.C.Berkeley3EE143F05Lecture8AllAtomicComponentshavesameVelocity…FBafterBFBindingenergyof
5、molecule(~severaleV)FisnegligiblecomparedwithimplantationF''V=Venergy(manykeV).BFSamevelocityV=VBF(movetogetherasamolecule)1111m2+2(m2)=m′2+2(m′2)[1]2BvB2FvF2BvB2FvF(mB+2mF)vB=mBv'B+2mFv'F[2]Theonlywaytosatisfyboth[1]and[2]is:v′B=v′F=vB=vF.ProfessorNCheung,U.
6、C.Berkeley4EE143F05Lecture8MolecularImplantationforShallowJunctionsForconventionalbeamlineimplantersBeamcurrentI↓asacceleratorvoltage↓B+I(B+)↓asvoltage<5kVBF+I(BF+)canstillbehighwith25kV22acceleratingvoltagebuttheeffectiveBimplantationenergyis~5keV*Forultra-s
7、hallowjunctionwhichneeds~1keVB+energy,BH(+)at~10keVisproposed1014ProfessorNCheung,U.C.Berkeley5EE143F05Lecture8ImplantationDamageAfterimplantation,weneedanannealingstep.Atypical~900oC,30minwill:(1)RestoreSicrystallinity.(2)PutdopantsintoSisubstitutionalsitesf
8、orelectricalactivationProfessorNCheung,U.C.Berkeley6EE143F05Lecture8ImplantationDamageProfessorNCheung,U.C.Berkeley7EE143F05Lecture8AmountandtypeofCrystallineDamageProfessorNCheung,U.C.Be
