berkley_半导体工艺讲义--离子注入

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1、EE143F05Lecture7IonImplantation+C(x)as-implantdepthprofileyBlockingmaskSiEqual-ConcentrationDepthxxcontoursConcentrationProfileversusDepthisasingle-peakfunctionReminder:Duringimplantation,teReminder:Duringimplantation,temperatureisambient.However,mperatureisambient.However,post-implantannealingstep(

2、>900opost-implantannealingstep(>900oC)isrequiredtoannealoutdefects.C)isrequiredtoannealoutdefects.ProfessorNCheung,U.C.Berkeley1EE143F05Lecture7AdvantagesofIonImplantation•Precisecontrolofdoseanddepthprofile•Low-temp.process(canusephotoresistasmask)•Wideselectionofmaskingmaterialse.g.photoresist,oxi

3、de,poly-Si,metal•Lesssensitivetosurfacecleaningprocedures•Excellentlateraldoseuniformity(<1%variationacross12”wafer)Applicationexample:self-alignedMOSFETsource/drainregionsAs+As+As+PolySiGaten+n+SiO2p-SiProfessorNCheung,U.C.Berkeley2EE143F05Lecture7MonteCarloSimulationof50keVBoronimplantedintoSiProf

4、essorNCheung,U.C.Berkeley3EE143F05Lecture7(1)Rangeandprofileshapedependsontheionenergy(foraparticularion/substratecombination)(2)Height(i.e.Concentration)ofprofiledependsontheimplantationdose3C(x)in#/cm3[Conc]=#ofatoms/[Conc]=#ofatoms/cmcm32[dose]=#ofatoms/[dose]=#ofatoms/cmcm2∞doseφ=∫Cxdx()0Depthxi

5、ncmProfessorNCheung,U.C.Berkeley4EE143F05Lecture7MasklayerthicknesscanblockionpenetrationphotoresistSiO,2ThickSiN,34MaskorothersThinmaskCompleteIncompleteNoblockingblockingBlockingSUBSTRATEProfessorNCheung,U.C.Berkeley5EE143F05Lecture7IonImplanter$3-4M/implantere.g.AsH3~60wafers/hourAs+,AsH+,H+,AsH+

6、2MagneticMassseparationAcceleratorVoltage:1-200kVIonDose~1011-1016/cm2sourceAccuracyofdose:<0.5%As+Uniformity<1%for8”waferAcceleratorwaferColumnionbeam(stationary)Translationalwaferholderspinningmotion.waferholderProfessorNCheung,U.C.Berkeley6EE143F05Lecture7ProfessorNCheung,U.C.Berkeley7EE143F05Lec

7、ture7EatonHE3HighEnergyImplanter,showingtheionbeamhittingthe300mmwaferend-station.ProfessorNCheung,U.C.Berkeley8EE143F05Lecture7ImplantationDoseForsinglychargedions(e.g.As+)IonBeamCurrentinampsImpl