A Steep-Slope MoS 2 Graphene Dirac-Source Field-E ff ect Transistor with a Large Drive Current - Tang et al. - 2021 - Unknown

《A Steep-Slope MoS 2 Graphene Dirac-Source Field-E ff ect Transistor with a Large Drive Current - Tang et al. - 2021 - Unknown》由会员上传分享，免费在线阅读，更多相关内容在学术论文-天天文库。

pubs.acs.org/NanoLettLetterASteep-SlopeMoS2/GrapheneDirac-SourceField-EffectTransistorwithaLargeDriveCurrent§,§ZhaowuTang,ChunsenLiu,*XiaoheHuang,SenfengZeng,LiweiLiu,JiayiLi,Yu-GangJiang,DavidWeiZhang,andPengZhou*CiteThis:NanoLett.2021,21,1758−1764ReadOnlineACCESSMetrics&MoreArticleRecommendations*sıSupportingInformationABSTRACT:Inthecontinuoustransistorfeaturesizescalingdown,thescalingofthesupplyvoltageisstagnantbecauseofthesubthresholdswing(SS)limit.AtransistorwithanewmechanismisneededtobreakthroughthethermioniclimitofSSandholdthelargedrivecurrentatthesametime.Here,byadoptingtherecentlyproposedDirac-sourcefield-effecttransistor(DSFET)technology,weexperimentallydemonstrateaMoS2/graphene(1.8nm/0.3nm)DSFETforthefirsttime,andasteepSSof37.9mV/decatroomtemperaturewithnearlyfreehysteresisisobserved.Besides,bybringinginthestructureofgate-all-around(GAA),theMoS2/grapheneDSFETexhibitsasteeperSSof33.5mV/decanda40%increasednormalizeddrivecurrentupto52.7μA·μm/μm(V=1V)withacurrenton/offratioof108,whichshowspotentialforlow-powerandhigh-performanceelectronicsDSapplications.KEYWORDS:MoS2,graphene,Dirac-source,gate-all-around,steep-slope,largedrivecurrentDownloadedviaUNIVOFCAPETOWNonMay14,2021at09:59:44(UTC).Thescalingdownofsilicon-basedmetal-oxide-semi-Recently,Dirac-sourceFET(DSFET)hasbeenproposedtoconductorfield-effecttransistor(MOSFET)willnotablyachieveSSbelow60mV/decatroomtemperaturewithoutincreasethedeviceperformanceandcutdowntheirpowercompromisingotheraspectsoftransistorperformanceandthus11−14Seehttps://pubs.acs.org/sharingguidelinesforoptionsonhowtolegitimatelysharepublishedarticles.consumption.However,thesubthresholdswing(SS)ofhasattractedextensiveattention.WhenusingtheDiracMOSFETislimitedtomorethan60mV/decatroommaterialthathasalinearlydecreaseddensityofstates(DOS)temperature,whichwillnotsupportthefurtherscalingofthewithenergyasthesourcematerialofn-typeFET,asteeperSSsupplyvoltage.ToimprovetheelectricalperformanceandcomparedtotheconventionalFETcanbeachieved.Moreover,powerconsumption,lowerSSisneeded.SomenewFETsincetheelectronsinDirac-sourcearestillinjectedintothetechnologieswithemergingprinciplessuchastunnelingFETchannelbythermalemission,DSFETcanstillmaintainthe(TFET)1−5andnegativecapacitanceFET(NCFET)6−10havelargedrivecurrentasthesameastheconventionalMOSFETbeenproposedandwidelystudied.Theyutilizetheband-to-withoutanydegradation.Two-dimensional(2D)materialbandtunnelingeffectofelectronsandthevoltageamplificationMoS2,whichexhibitlargebandgapandexcellentgateeffectofnegativecapacitiveferroelectricstoachievesteeperSS.electrostaticsbecauseofitsatomicallythinthickness,isHowever,bothofthesetwotechnologieshavesomedrawbackslimitingtheirpracticalapplication.Forexample,carriersareReceived:November25,2020injectedintothechannelthroughband-to-bandtunnelinginRevised:February6,2021TFET,thusgreatlysuppressingthedrivecurrentofthedevice.Published:February10,2021ForNCFET,theferroelectricsarepronetopolarizationintheelectricfield,whichmakestheworkingstateofthedeviceunstableandmayhavehysteresisintheirI−Vcurves.©2021AmericanChemicalSocietyhttps://dx.doi.org/10.1021/acs.nanolett.0c046571758NanoLett.2021,21,1758−1764

1NanoLetterspubs.acs.org/NanoLettLetterFigure1.Schematicdiagramofthesteep-slopeMoS2/GrDSFET.(a)ThecontinuousconstantdensityofstatesDOS(E),Boltzmanndistributedelectrondensityn(E),andelectroninjectioninthenormalmetallicsourceofconventionalMOSFET.(b)ThelinearlyvarieddensityofstatesDOS(E),superexponentiallydecreasedelectrondensityn(E)withdecreasingenergy,andelectroninjectioninDirac-sourceofDSFET.Thepurpledashedlineinn(E)representstheBoltzmanndistribution.(c)SchematicdiagramofperformancecomparisonbetweenconventionalMOSFETandDSFET.DSFETexhibitsasteeperSSwhilemaintainingthesamelevelofdrivecurrentasconventionalMOSFET.(d)StructurediagramoftheMoS2/GrDSFET.(e)BanddiagramoftheMoS2/GrDSFETinoff-state,wherethebulkbarrierheightϕBishigherthantheenergyofthehigh-energyelectronsinGrsource.Figure2.StructuralcharacterizationandelectricalperformanceoftheMoS2/GrDSFET.(a)Top-viewopticalmicroscopeimageoftheMoS2/GrDSFETfabricatedontheAl2O3/Sisubstrate.Thelength(L)andwidth(W)ofthechannelare7μm.(b)RamanspectraofmonolayerGrandtrilayerMoS2measuredbyusingasolid-statelaserwith532nmwavelength.(c)Cross-sectionalhigh-resolutionTEMimageandthecorrespondingEDSmapofthesourceregionofthedevice.ThetopandbottomhBNhaveasimilarthicknessof∼5nm,andMoS2andGraretrilayerandmonolayer,respectively.(d)OutputcharacteristiccurvesofthedeviceunderdifferentVG(varyingfrom−2to2V),demonstratingagoodOhmiccontact.(e)ForwardandreversetransfercharacteristiccurvesofthedeviceunderVDS=0.5V.TheinsetisthetransfercharacteristiccurvesofIDSfrom10−12to10−11A,showingthatthedeviceexhibitsanearlyfreehysteresisof3mV.(f)SSversusIextractedfromthetransfercharacteristicDScurvesin(e)withaminimumSSof37.9mV/decThedashedlinerepresentsthethermallimitofSSatroomtemperature(60mV/dec).TheinsetisthetransfercharacteristiccurveandtheaverageSSofthedeviceinacurrentrangearoundthepointwhichexhibitsthesmallestSSvalueof37.9mV/dec.AnaverageSSof38.3mV/decisobtained,indicatingthatthedevicedoeshaveastableSSperformanceofabout38mV/decinthislowcurrentrange.1759https://dx.doi.org/10.1021/acs.nanolett.0c04657NanoLett.2021,21,1758−1764

2NanoLetterspubs.acs.org/NanoLettLetternaturallydeterminedtoobtainmuchlowerpowercon-constructedbythedrytransfermethod.Moreover,almostallsumptionintheMOSFETstructureandthusisapromisingoftheareasofGrandMoS2arecoveredbyhBN,whichwell15−23candidateforlow-powerelectronics.Mostimportantly,shieldstheinfluenceoftheexternalenvironmentonthedevice.MoS2caneasilyintegratewithDiracmaterialgraphene(Gr)ThedetaileddevicefabricationprocessisshowninMethodsbyvanderWaalsstackingandbringinthegate-all-aroundandthecorrespondingopticalmicroscopeimageduringthe(GAA)structureintotheDSFET.Inthatcase,thisnewfabricationisshowninFigureS3.Figure2bdisplaystheDSFETwithGAAstructurewouldshowadvantagesinbothRamanspectraofGrandMoS2.TheGrexhibitstheGpeakatsmallSSandlargedrivecurrent.∼1582.7cm−1and2Dpeakat∼2673.5cm−1.Meanwhile,theInthiswork,weexperimentallydemonstrateasteep-slopeintensityratioof2DtoGpeakis∼2.46andthe2DbandMoS2/GrDSFETforthefirsttime.UtilizingtheDiracpointofshowsasingleLorentziancurvewithafullwidthathalf-Gr,asteepSSof37.9mV/decatroomtemperatureismaximumof∼28.27cm−1,whichindicatesthatitisa27,281achieved.ThegoodinterfaceofthisvanderWaals’monolayerGr.TheMoS2exhibitstheE2gpeakat∼383.1heterostructureguaranteesahysteresis-freeI−Vcurve.Addi-cm−1andApeakat∼407.1cm−1.Thefrequencydifference1gtionally,byintegratingGAAstructureintothisDSFETthebetweenthetwomodesis∼24cm−1,indicatingthatitisa29,30MoS2/GrDSFETexhibitsasteeperSSof33.5mV/decandatrilayerMoS2.Figure2cistheTEMimageandthedetailed40%increasednormalizeddrivecurrentupto52.7μA·μm/μmEDSelementalmapofthesourceregionofthedevicewhere(VDS=1V).Theseresultsaddressthekeychallengesforlow-GrislocatedabovetheMoS2channel,andtheGr/MoS2powerandhigh-performancetransistorapplications.heterostructureissandwichedbetweenthetophBNInconventionalMoS2MOSFET,thenormalmetallicsourceencapsulatinglayerandthebottomhBNgatedielectric.AssuchasAuhasacontinuousconstantDOSaroundtheFermishownintheTEMimage,thetopandbottomhBNhavea24levelEF.BecausetheelectronfollowstheFermi−Diracsimilarthicknessofaround5nm,andMoS2andGraretrilayerdistributionfunctionf(E),thesourceelectrondensityn(E)andmonolayer,respectively.Additionally,theinterfaceexhibitsapproximateBoltzmanndistribution(DOS(E)∼betweenlayersiscleanandfreeofcontaminationthankstoexp[(EF−E)/kT])withalongthermaltailaboveEF,asthenonresiduedrytransfermethodthathasbeenused.seeninFigure1a.Asaresult,thetransistorsuffersfromaSSFurthermore,theEDSmapofMo,N,andCelementshas2thermioniclimitof60mV/decatroomtemperature,confirmedthecompositionofthematerialsandtheirrestrictingitsfurtherscalingofthesupplyvoltage.Whentherespectivelocationsintheverticaldirection.DiracmaterialthathasalinearlydecreasedDOSwithenergyThefundamentalelectricalperformancesofthedeviceare(DOS(E)∼EDirac−E)isusedasthesourcematerialofMoS2presentedinFigure2d−f.Figure2dshowstheoutputMOSFET,theelectrondensityn(E)aboveEFwillsuper-characteristicofthedeviceunderthegatevoltageVGvaryingexponentiallydecreasewithincreasingenergy(n(E)∼(EDiracfrom−2to2V.DraincurrentIDSshowsagoodlinear−E)exp[(EF−E)/kT]),asshowninFigure1b.ThisDirac-relationshipwithdrainvoltageVDS,whichdemonstratesthesourcegreatlycutsdownthelongthermaltailandcontributesgoodOhmiccontactbetweenMoS2channelanddrain/sourcetoasteeperSScomparedtotheconventionalMOSFETelectrodes.Figure2edisplaystheforwardandreversetransfer(Figure1c).Also,thisnewmechanismwillnotattenuatethecharacteristiccurvesofthedeviceunderadrainbiasof0.5VdrivecurrentofDSFET,becausetheelectronsinthesource(thecorrespondinggateleakagecurrentIGisshowninFigurearestillinjectedintothechannelbythermalemission.S4).AccordingtotheoutputcharacteristiccurvesundertheFigure1disthestructurediagramofourMoS2/GrDSFET.VDSsweeprangeof±0.5VasshowninFigureS5,theIDSisFew-layern-typeMoS2isusedasthechannelmaterialwhilebasicallylinearwiththeVDS,confirmingthatthetransfercurvesmonolayerp-typeGr(thetransfercharacteristiccurvesofGrundertheVDSof0.5Vweremeasuredinthelinearregion.areshowninFigureS1)isusedasthesourcematerial,whichThankstotheperfectdangling-bond-freeandcontamination-11−14satisfiesthedesignrequirementsofDSFET.Also,hBNisfreeinterfacebetweentheMoS2channelandhBN,theforwardselectedasthegatedielectricduetoitsperfectinterfacewithandreversetransfercharacteristiccurvesarealmostidenticaltheMoS2channel.Moreover,toreducetheimpactofthewithaverysmalldifferenceofonly3mV.Onthebasisofthe25,26externalenvironmentondeviceperformance,anencapsu-transfercharacteristiccurves,thecorrespondingSSislatinghBNlayerisaddedonthedevicesurface.AsshownincalculatedbytheformulaSS=dVG/dlog(IDS)andisFigure1e,thereisabulkbarrier(ϕB)betweentheGrsourcepresentedinFigure2f.Fromthecalculationresults,wecanandMoS2channel,whichcanbemodulatedbythegateseethatthethermioniclimitofSS(60mV/decatroomvoltage(VG).WhenVGisproperlynegativebiasedtomakethetemperature)isbrokensuccessfullyintheMoS2/GrDSFETbarrierheighthigherthanthehigh-energyelectronsoftheandaminimumSS(SSmin)of37.9mV/decisachieved.source,themajorityofelectronscannotbeinjectedfromtheBesides,theMoS2/GrDSFETwithsub-60mV/decatroomsourceintothechannelandthedeviceisinoff-state(Figuretemperaturehasbeenrepeatedlydemonstratedinother1e).Duringtheswitching-onprocesswithincreasingVG,thedevices,andtheircorrespondingstructureandelectricalbarrierheightgraduallydecreasesandtheDOSofGrsourceatperformancearepresentedinFigureS6.thetopofthebarrierincreaseslinearly,resultinginaGAAisreferringtothetransistorstructureinwhichthegatesuperexponentiallyincreasedelectrondensityoverthebarrierfullysurroundsthechanneltoachieveexcellentgateandthuscontributingtoasteepSS(seeFigureS2).controllabilityandincreasetheeffectivechannelwidth.InThestructureofMoS2/GrDSFETwascharacterizedbytherecentyears,theadvancedGAAtechnologyhasattractedopticalmicroscope,Ramanspectroscopy,transmissionelectronextensiveattentionfromacademiaandindustryandismicroscope(TEM),andenergydispersivespectroscopyconsideredasagoodcandidateinthetechnologynode31(EDS).Figure2ashowstheopticalmicroscopeimageofthebelow5nm.Uptonow,manyGAAtransistorsbasedon31−34MoS2/GrDSFETontheAl2O3/Sisubstrate.ThehBN,MoS2,siliconnanosheetsandnanowireshavebeenreported,Grwerepreparedbyexfoliationandtheheterostructureswerewhichhavedemonstratedbetterelectricalperformancethan1760https://dx.doi.org/10.1021/acs.nanolett.0c04657NanoLett.2021,21,1758−1764

3NanoLetterspubs.acs.org/NanoLettLetterFigure3.StructurediagramandelectricalperformanceoftheMoS2/GrDSFETwithGAAstructure.(a)SchematicdiagramoftheMoS2/GrDSFETwithGAA.ThegatedielectricishBN.(b)Cross-sectionalstructurediagramofthedeviceinthesidedirection.(c)Schematicdiagramofthedistributionofchargegeneratedinthechannelwhenapositivegatevoltageisapplied.(d)Transfercharacteristiccurves(underVDS=0.5VandVDS=1V)andoutputcharacteristiccurves(inset,underVG=1.5VandVG=2V)ofplanarMoS2/GrDSFETandGAAMoS2/GrDSFETinlinearscale.ThedrivecurrentofGAAFETis140%ofthatofnormalplanarFET.(e)SSversusIDSofplanarMoS2/GrDSFETandGAAMoS2/GrDSFETinthelargescaleandthesmallscale(inset)underVDS=0.5V.TheSSofGAAFETissteeperthanthatofnormalplanarFETandhasaminimumSSof33.5mV/dec(f)ComparisonofminimumSSandnormalizeddrivecurrentIon/(W/L)(onlyref10wasmeasuredatVDS=0.9V,othersweremeasuredatVDS=1V)betweenourMoS2/GrDSFETwithGAAandthepreviouslyreportedMoS2FETs(includingconventionalMOSFET,TFET,andNCFETbasedonMoS2).Theredellipsearearepresentshigh-performanceFETswithlargedrivecurrentwhiletheblueellipsearearepresentslow-powerFETswithsteepSS,andtheMoS2/GrDSFETwithGAAstructureinthisworkislocatedinthepreferredcornerwithbothlowpowerandhighperformance.Figure4.EffectsofGrthicknessandtemperatureonSSofDSFET.(a)BanddiagramofthemonolayerGrandmultilayerGr.(b)SSversusIDSofMoS2FETswithdifferentthicknessesofGrasthesourceunderVDS=0.5V.1L,2L,3Linthefigurerepresentthenumberofgraphenelayersas1,2and3,respectively.(c)SSversusthenumberoflayersofGrextractedfromthecurvesin(b).ThepentagraminthefigurereferstoSSaveandthecirclereferstoSSmin.SSminrepresentstheminimumSSwhileSSaverepresentstheaverageSSintwoordersmagnitudeofIDS.(d)Schematicdiagramoftheeffectoftemperatureontheelectrondensityn(E)oftheGrDirac-source.(e)TransfercharacteristiccurvesoftheMoS2/GrDSFETatdifferenttemperatures(varyingfrom50to300K)underVDS=0.5V.(f)AverageSS(intwoordersmagnitudeofIDS)versustemperatureextractedfromthetransfercharacteristiccurvesin(e).1761https://dx.doi.org/10.1021/acs.nanolett.0c04657NanoLett.2021,21,1758−1764

4NanoLetterspubs.acs.org/NanoLettLettertheplanartransistor,includingtheimprovedSSanddrivecarriersinthesourceareinjectedintothechannelthroughcurrent.Thegoodelectricalperformanceof2Dmaterialsthermalemission,theSSwillvarylinearlywithtemperature.underultrathinthicknessandatomiclevelflatinterfaceinvanWhenthecarriersareinjectedintothechannelthroughband-derWaalsheterostructuresmakethemappropriatefortheto-bandtunneling,theSSwillbealmostindependentwith2,36GAAstructure.temperature.IntheMoS2/GrDSFET,sincetheelectronsInthiswork,tofurtherimprovetheperformanceoftheinthesourcearestillinjectedintothechannelbythermalMoS2/GrDSFETweoptimizedthedevicebyintroducingtheemissionandthesourceelectrondensityn(E)isproportionalstructureofGAA.ThedetailedfabricationprocessoftheGAAtoexp[(EF−E)/kT]likeothernormalMOSFETs(asshowndeviceisshowninMethodsandFigureS7.TheoptimizedinFigure4d),itsSSshouldalsobelinearwithtemperature.IndevicestructurediagramisshowninFigure3a,b,wherethethetemperaturechangemeasurement,thecharacteristiccurvesMoS2channelissurroundedbyhBNdielectricandthehBNisofatypicalMoS2/GrDSFETweremeasuredatdifferentsurroundedbythegateelectrode.Itisworthnotingthat,temperaturesvaryingfrom50to300K(asshowninFigurecomparedwiththeplane-gatestructure,theGAAstructure4e),andtheextractedSSisshowninFigure4f,whichshowsenablesthegatetocontrolthechannelnotonlyfromonesideanexpectedlineardependenceontemperature.Inaddition,butfromallsides,sothatthecarrierscanbegeneratedinallofaccordingtotherelationshipbetweenIDSandTasshowninthesidesofthechannelunderthepositivegatevoltage(asFigure4e,wecanplotthecorrespondingArrheniuscurvesshowninFigure3c).Asaresult,itcanbeseenfromtheunderdifferentVGandthenobtaintheeffectiveSchottkytransfercharacteristiccurvesandoutputcharacteristiccurvesbarrierheightϕBasafunctionofVGbycalculatingtheslopeofshowninFigure3dthatthedrivecurrentofGAADSFETistheselines(asshowninFigureS9).TheaccurateϕBofour26,37increasedby40%comparedwithnormalplanarDSFET.devicecanbeextractedattheflatbandcondition,whichisMoreover,becausethegatecontrollabilityisalsoimprovedinfoundtobeassmallas65.5meV.theGAAdevice,asteeperSSisobtainedintheMoS2/GrInsummary,basedonthemethodofsourceDOSDSFETwithGAAcomparedtotheplanarMoS2/GrDSFET,engineering,theMoS2/GrDSFETwithp-typeGrastheasshowninFigure3e.Also,theminimumSSisfurtherDirac-sourceisproposedandprepared.Thedevicedemon-reducedto33.5mV/dec.stratesasteepSSof37.9mV/decatroomtemperatureandaInFigure3f,wehavereviewedpreviouslyreportedhigh-nearlyfreehysteresisof3mV.ThedeviceisfurtheroptimizedperformanceMoS2FETs,includingconventionalMOS-byintroducingtheGAAstructureandfinallyasteeperSSofFET,16−23TFET,3−5andNCFET9,10basedonMoSand33.5mV/decanda40%increasednormalizeddrivecurrentup2havecomparedtheirperformanceonSSanddrivecurrentwithto52.7μA·μm/μm(VDS=1V)areachieved.ThisMoS2/GrourMoS2/GrGAADSFET(thedetailedstructureandDSFETwithsteepSSandlargedrivecurrentispromisingforperformanceinformationontheseworksarepresentedinfutureelectronicapplicationsandthestrategyofcombiningTableS1).BecausethecurrentofthetransistorisproportionalDirac-sourceandGAAstructureprovidesanewideaforthetothewidth-to-lengthratio(W/L)ofthechannelanddifferentdevelopmentoflow-powerandhigh-performanceelectronicworkshavevariousW/L,forobjectiveevaluationofthesedevices.workswehavenormalizedthedrivecurrent(Ion/(W/L))involvedinthecomparison.Fromtheresultsofthe■METHODScomparison,theMoS2/GrGAADSFEThasamorebalancedDeviceFabrication.TheTi/Aufilms(5nm/10nm)wereperformanceinSSanddrivecurrentandthusshowspromisingfirstpatternedanddepositedontheAl2O3/Sisubstrate(50nmpotentialforlow-powerandhigh-performanceelectronicAl2O3grownonp-dopedSisubstratesbyatomiclayerapplications.deposition)asthebottomgateelectrodebyusingelectron-WhenGrisusedasthesourcematerialoftheMoS2FET,beamlithographyandphysicalvapordeposition.Afterthat,thetheDOSofGrshouldchangelinearlywiththeenergyE,whichmultilayerhBN,MoS2,andmonolayerGrweremechanicallymeansthatwemustchoosethemonolayerGrwhichhasaexfoliatedfrombulkcrystalstoPDMSandthenwerelinearbanddispersion(asshowninFigure4a)asthesourcetransferredinturnfromthePDMSonthebottomgatematerial.FormultilayerGr,sinceitsenergybandnolongerhaselectrodetoformthehBN/MoS2/Gr/hBNheterostructures.thelineardispersionandthereevenmaybeasmalloverlapFinally,thesourceanddrainelectrodeswerepatternedand35betweenitsvalencebandandconductionband(asshownindepositedontheGrandMoS2film,respectively,byusingFigure4a),itselectrondensityn(E)aroundtheFermilevelEFelectron-beamlithographyandelectron-beamevaporationofisnotconcentratedinanarrowrangeandthereforeitisnotCr/Aufilms(5nm/30nm).FortheGAAdevice,theprevioussuitableastheDirac-source.Here,tofurtherverifythestepsarethesameasabove,butanadditionalstepofmetalmechanism,wehavepreparedseveralbatchesofMoS2FETsgateelectrodedeposition(Cr/Au,5nm/30nm)abovethewithGrofdifferentthicknessesasthesourcematerial,andthechannelisrequiredtoformafullenclosureofthegatetotheopticalmicroscopeimagesofthedevicesandtheRamanchannelbyusingelectron-beamlithographyandelectron-beamspectrumofthecorrespondingGrarepresentedinFigureS8.evaporation.Afterfabrication,thedeviceswereannealedat250Figure4b,cshowstheresultsofelectricalmeasurement,and°Cinnitrogenatmospherefor2htoensuregoodcontactwecanseethattheMoS2FETwithmultilayerGrasthesourcebetweenflakesandbetweenthemetalelectrodeandshowsamuchhigherSSthanthatoftheMoS2/GrDSFETsemiconductor.withmonolayerGrDirac-sourceandisfailingtobreaktheSSCharacterizations.Ramanspectroscopywasmeasuredinthermallimitof60mV/decatroomtemperature,whichisveryaSOLInstrumentbyusingasolid-statelaserwith532nmconsistentwiththetheory.wavelength.TheelectricalperformanceofthedeviceatroomTheeffectoftemperatureonSSofMoS2/GrDSFEThastemperaturewasmeasuredinaprobestation(Cascadealsobeeninvestigated.TherelationshipbetweenSSandSummit11000type)byusingtheAgilentB1500Asemi-temperaturedependsonthecarrierinjectionways.Whentheconductordeviceparameteranalyzer.Thetemperaturechange1762https://dx.doi.org/10.1021/acs.nanolett.0c04657NanoLett.2021,21,1758−1764

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