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1、SupportingInformationforPublication:DirectProbingofGapStatesandtheirPassivationinHalidePerovskitesbyHigh-Sensitivity,VariableEnergyUltravioletPhotoelectronSpectroscopyIgalLevine1,KoheiShimizu2,AlbertoLomuscio3,MichaelKulbak4,CarolinRehermann1,AravaZohar4,MojtabaAbdi-Jalebi5,Ba
2、odanZhao6,7,SusanneSiebentritt3,FengshuoZu8,NorbertKoch1,8,AntoineKahn9,GaryHodes4,RichardH.Friend6,HisaoIshii2andDavidCahen4,101Helmholtz-ZentrumBerlinfürMaterialienundEnergieGmbH,Kekulé-Str.5,12489Berlin,Germany2CenterforFrontierScience,ChibaUniv.,1-33,Yayoi-cho,Inage-ku,Chi
3、ba-shi,263-8522Chiba,Japan3Lab.forPhotovoltaics,Univ.duLuxembourg,41,rueduBrill,L-4422Belvaux,Luxembourg4Dept.ofMaterials&Interfaces,WeizmannInst.ofScience,Rehovot76100,Israel5InstituteforMaterialsDiscovery,UniversityCollegeLondon,MaletPlace,London,WC1E7JEUK6CavendishLaborator
4、y,UniversityofCambridge,JJThomsonAvenue,Cambridge,CB30HEUK7StateKeyLaboratoryofModernOpticalInstrumentation,CollegeofOpticalScienceandEngineering;InternationalResearchCenterforAdvancedPhotonics,ZhejiangUniversity,Hangzhou,China8InstitutfürPhysik&IRISAdlershof,Humboldt-Universi
5、tätzuBerlin,12489Berlin,Germany9Dept.ofElectricalEngineering,PrincetonUniversity,Princeton,NJ08544,USA10Bar-IlanInst.forNanotechnol.&Adv.Mater.(BINA)andDept.ofChemistry,Bar-IlanUniv.,RamatGan,IsraelS1FigureS1:VariableenergyHS-UPSmeasurementsofaCr/AufilmdepositedonaSi/SiO2wafer
6、.Longpassfiltercut-off0.005Au/PTAA/MixAPbBr3FTO/TiO2/2D-3D0.0040.0030.002SPVamplitude[mV]0.0010.0000.60.81.01.21.41.61.82.02.22.4Photonenergy[eV]FigureS2:ModulatedSPVmeasurementsinthefixedcapacitorarrangementofaMixAPbBr3filmdepositedonAu/PTAAsubstrate(showninteal,illuminationu
7、singahalogenlampthroughtheHaPS2side)andofa2D/3DHaPfilmdepositedonFTO/TiO2substrate(showninred,illuminationusingahalogenlampthroughtheFTOside).FigureS3:VariableintensityHe-1UPSmeasurementsofMixAPbBr3onFTO/TiO2(right)andonAu/PTAA(left)FittingofSPVresultstoCFSinFigure3.Fittingfun
8、ctionwasthesumoffourGaussianfunctionswhichpeakatthedefectener
