微电子工艺原理试题.docx

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1、微电子工艺原理试题微电子工艺本理一、单项取舍1.Themostcommonreticlereductionratiousedwithstep-and-scanexposuretoolsis（）a.1:1and4:1b.1:1and5:1c.4:1and5:1d.4:12.Whichofthefollowingprocessesareperformedinthediffusionarea?Circleallthatapply.（）a.wafercleansb.hightemperatureprocessingc.metallizationd.polishinge.photo

2、resiststripping3.Whatarethethreeproductionareaswherephotoresist-coatedwaferscanbefound?（）a.diffusionb.photolithographyc.etchd.implante.thinfilmsf.polish4.Whichofthefollowingisnotacommonproductiontoolinthethinfilmsarea?（）a.plasmaresiststripperb.CVDsystemsC.PVDsystemsd.rapidthermalannealsys

3、teme.sputteringsystemf.spin-on-glassdispensesystem5.WhatdoesthetermCMPstandfor?（）a.chemicallymodulatedphotostabilizerb.chemicalmechanicalpropellantc.chemicalymanipulatedplasmad.chemicalmechanicalplanarization6.WhatisanothernameforCMP?（）a.etchb.implantc.polishd.diffusion7.ThetermWETstandsf

4、or（）a.waferetchtechnologyb.wetetchfortitaniumcontanctsc.waferelastomerictreatmentd.waferelectricaltest8.Thedataobtainedfromwafertest/sortisusedto（）a.determinewhichwafersneedtogothroughWET.b.determinewhichwafersneedtogothroughbackgrind.c.determinesthedieyieldforeachwafer.d.calculatecycleti

5、meforwaferproduction.9.Thewaferistestedtwiceinordertodetermineitsproductworthiness（）a.onceafterfirstmetaletchandafterthecompletionofthelastwaferprocessstep.b.oncebeforethecontanctetchandafterthecompletionofthewaferprocessflow.c.onceafterthefirstionimplantandafterthecompletionofthewaferpro

6、cessflow.d.onceatwafer/testsortandafterdieseparation.10.Thepurposeofthecontanctformationprocessisto（）a.insulateallexposedsiliconareasofthewafer.b.formmetalcontactsonallactiveareasofthesilicon.c.createbarriersforchargecarriersbetweentransistors.d.formmetalcontactsonallexposedareasofsilicon

7、dioxide.11.Whatarethereasonsforthethermalannealprocessafterionimplantation?（）a.Annealingensuresthatthesiliconisreadytobondwiththeimplantedtungsten.b.AnnealingthewaferafterimplantpreparesthesiliconfortheSTIetchprocessc.Annealdrivesdopantsfurtherintothesiliconandrecry