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时间:2021-04-20
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1、微电子工艺原理试题微电子工艺本理一、单项取舍1.Themostcommonreticlereductionratiousedwithstep-and-scanexposuretoolsis()a.1:1and4:1b.1:1and5:1c.4:1and5:1d.4:12.Whichofthefollowingprocessesareperformedinthediffusionarea?Circleallthatapply.()a.wafercleansb.hightemperatureprocessingc.metallizationd.polishinge.photo
2、resiststripping3.Whatarethethreeproductionareaswherephotoresist-coatedwaferscanbefound?()a.diffusionb.photolithographyc.etchd.implante.thinfilmsf.polish4.Whichofthefollowingisnotacommonproductiontoolinthethinfilmsarea?()a.plasmaresiststripperb.CVDsystemsC.PVDsystemsd.rapidthermalannealsys
3、teme.sputteringsystemf.spin-on-glassdispensesystem5.WhatdoesthetermCMPstandfor?()a.chemicallymodulatedphotostabilizerb.chemicalmechanicalpropellantc.chemicalymanipulatedplasmad.chemicalmechanicalplanarization6.WhatisanothernameforCMP?()a.etchb.implantc.polishd.diffusion7.ThetermWETstandsf
4、or()a.waferetchtechnologyb.wetetchfortitaniumcontanctsc.waferelastomerictreatmentd.waferelectricaltest8.Thedataobtainedfromwafertest/sortisusedto()a.determinewhichwafersneedtogothroughWET.b.determinewhichwafersneedtogothroughbackgrind.c.determinesthedieyieldforeachwafer.d.calculatecycleti
5、meforwaferproduction.9.Thewaferistestedtwiceinordertodetermineitsproductworthiness()a.onceafterfirstmetaletchandafterthecompletionofthelastwaferprocessstep.b.oncebeforethecontanctetchandafterthecompletionofthewaferprocessflow.c.onceafterthefirstionimplantandafterthecompletionofthewaferpro
6、cessflow.d.onceatwafer/testsortandafterdieseparation.10.Thepurposeofthecontanctformationprocessisto()a.insulateallexposedsiliconareasofthewafer.b.formmetalcontactsonallactiveareasofthesilicon.c.createbarriersforchargecarriersbetweentransistors.d.formmetalcontactsonallexposedareasofsilicon
7、dioxide.11.Whatarethereasonsforthethermalannealprocessafterionimplantation?()a.Annealingensuresthatthesiliconisreadytobondwiththeimplantedtungsten.b.AnnealingthewaferafterimplantpreparesthesiliconfortheSTIetchprocessc.Annealdrivesdopantsfurtherintothesiliconandrecry
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