石墨烯制作方法总结.doc

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1、目前制备石墨烯采用的方法有：微机械剥离法、化学气相沉积法、氧化还原法、溶剂剥离法和溶剂热法等．Large-scalepatterngrowthofgraphenefilmsforstretchabletransparentelectrodesFigure1

2、Synthesis,etchingandtransferprocessesforthelargescaleandpatternedgraphenefilms.a,Synthesisofpatternedgraphenefilmsonthinnickellayers.b,EtchingusingFeCl3(orac

3、ids)andtransferofgraphenefilmsusingaPDMSstamp.c,EtchingusingBOEorhydrogenfluoride(HF)solutionandtransferofgraphenefilms.RT,roomtemperature(,25℃).Thinlayersofnickelofthicknesslessthan300nmweredepositedonSiO2/Sisubstratesusinganelectron-beamevaporator电子束蒸发器,andthesampleswerethenheatedto1

4、,000℃insideaquartztubeunderanargonatmosphere.Afterflowingreactiongasmixtures(CH4:H2:Ar=50:65:200standardcubiccentimetresperminute),werapidlycooledthesamplestoroomtemperature(25℃)attherateof,10℃/susingflowingargon.Wefoundthatthisfastcoolingrateiscritical关键insuppressingformationofmultipl

5、elayersandforseparatinggraphenelayersefficientlyfromthesubstrateinthelaterprocess.Inourwork,anaqueousiron(III)chloride(FeCl3)solution(1M)wasusedasanoxidizingetchanttoremovethenickellayers.Thenetionicequationoftheetchingreactioncanberepresentedasfollows:2Fe3+(aq)+Ni(s)=2Fe2+(aq)+Ni2+(aq

6、)ThisredoxprocessslowlyetchesthenickellayerseffectivelywithinamildpHrangewithoutforminggaseousproductsorprecipitates.Inafewminutes,thegraphenefilmseparatedfromthesubstratefloatsonthesurfaceofthesolution,andthefilmisthenreadytobetransferredtoanykindofsubstrate.Grapheneonmetalsurfaces