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ID:58738616
大小:1.04 MB
页数:69页
时间:2020-10-04
《现代CMOS工艺基本流程(英文)ppt课件.ppt》由会员上传分享,免费在线阅读,更多相关内容在教育资源-天天文库。
1、BasicCMOSProcessFlow现代CMOS工艺基本流程1BasicCMOSProcessFlowStartingPoint:Puresiliconwafer(heavily-doped)withalightly-dopedepitaxial(epi)layer.Anepilayerisusedtoprovideacleanerlayerfordeviceformationandtoprevent“latch-up”ofCMOStransistors.SiliconSubstrateP+~2microns~725
2、micronsSiliconEpiLayerP-21.ShallowTrenchFormationGrowPadOxide:Averythin(~200Å)layerofsilicondioxide(SiO2)isgrownonthesurfacebyreactingsiliconandoxygenathightemperatures.Thiswillserveasastressrelieflayerbetweenthesiliconandthesubsequentnitridelayer.SiliconSubstrat
3、eP+SiliconEpiLayerP-PadOxide3ShallowTrenchFormationDepositSiliconNitride:Alayer(~2500Å)ofsiliconnitride(Si3N4)isdepositedusingChemicalVaporDeposition.Thiswillserveasapolishstoplayerduringtrenchformation.SiliconSubstrateP+SiliconEpiLayerP-SiliconNitride4ShallowTre
4、nchFormationPatternPhotoresistforDefinitionofTrenches:Oneofthemostcriticalpatterningstepsintheprocess.0.5-1.0μmofresistisspun,exposed,anddeveloped.SiliconSubstrateP+SiliconEpiLayerP-SiliconNitridePhotoresist5ShallowTrenchFormationEtchNitrideandPadOxide:Areactivei
5、onetch(RIE)utilizingfluorinechemistryisused.SiliconSubstrateP+SiliconEpiLayerP-SiliconNitridePhotoresist6ShallowTrenchFormationEtchTrenchesinSilicon:Areactiveionetch(RIE)utilizingfluorinechemistryisused.Definestransistoractiveareas.SiliconSubstrateP+SiliconEpiLay
6、erP-SiliconNitridePhotoresistTransistorActiveAreasIsolationTrenches7ShallowTrenchFormationRemovePhotoresist:Anoxygenplasmaisusedtoburnofftheresistlayer.SiliconSubstrateP+SiliconEpiLayerP-SiliconNitrideTransistorActiveAreasIsolationTrenches8ShallowTrenchFormationF
7、illTrencheswithOxide:ACVDoxidelayerisdepositedtoconformallyfillthetrenches.Theoxidewillprevent“cross-talk”betweenthetransistorsinthecircuit.SiliconSubstrateP+SiliconEpiLayerP-SiliconNitrideFuturePMOSTransistorSiliconDioxideFutureNMOSTransistorNocurrentcanflowthro
8、ughhere!9ShallowTrenchFormationPolishTrenchOxide:ThesurfaceoxideisremovedusingaChemicalMechanicalPolish(CMP).TheCMPprocessisdesignedtostoponsiliconnitride.Sili
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