欢迎来到天天文库
浏览记录
ID:55576911
大小:850.23 KB
页数:8页
时间:2020-05-19
《高性能IGBT激光退火设备及其量产应用.pdf》由会员上传分享,免费在线阅读,更多相关内容在行业资料-天天文库。
1、电子工业专用设备EquipmentforElectronicProductsManufacturing材料制造工艺与设备高性能IGBT激光退火设备及其量产应用陈勇辉,刘国淦(上海微电子装备有限公司,上海201203)摘要:激光退火工艺可以有效修复离子注入破坏的晶格结构,获得比传统退火方式更好的离子激活效率和激活深度,且不损伤Taiko硅片的正面器件,从而在FS-IGBT器件的制造过程中得到业界的广泛关注和应用。针对FS-IGBT激光退火工艺的特点,通过对退火深度、激光波长、光斑尺寸,以及Taik
2、o薄片传输等技术的深入分析和数值仿真,完成了SLA500激光退火设备的研制,并通过现场测试数据验证。测试结果表明,SLA500激光退火设备的各项关键技术指标,如退火深度、激活效率、RS均匀性和重复性等,均能满足FS-IGBT激光退火工艺的量产应用。关键词:激光退火;绝缘栅双极型晶体管;Taiko硅片中图分类号:TN304.05文献标识码:A文章编号:1004-4507(2014)04-0001-07FS-IGBTLaserAnnealingScannerandRelatedApplication
3、sCHENYonghui,LIUGuoGan(ShanghaiMicroElectronicsEquipmentCo.,Ltd.Shanghai201203,China)Abstract:IGBTtechnologyhasbeendevelopedfromPlanarPunch-Through,TrenchNon-Punch-ThroughtoTrenchFieldStop(FS).Inordertoformafieldstoplayeronthebacksideofthewafer,deep-
4、implanteddopingelements(likePhosphorousandBoron)havetobeactivatedthroughahigh-temperatureannealingprocess.ComparedtotraditionalannealingprocessasRTPorfurnace,laserannealinghasmanyadvantages:energydensitypreciselycontrolled,shortprocessingtime(nanosec
5、ondsormicroseconds),highdopantactivationrate,smalldiffusion,optionalsub-meltingormeltingprocessing,notcausethermaldamagetothesubstratesurface,andperfectuniformityandrepeatability.SLA500laserannealingscannerhasbeendevelopedtoovercomeRTP/Furnaceshortco
6、mingandtoprovidesignificantlyhigherprocessstabilityandyieldforFS-IGBT.Thetestdatum,whichincludingRSuniformity&repeatability,activationrate&depth,hasshownthattheSLA500laserannealingscannerforfieldstopIGBTbacksidedopantactivationisapowerfultoolsuitable
7、formassproduction.Keywords:LaserAnnealing;IGBT(InsulatedGateBipolarTransistor);TaikoWafer收稿日期:2014-03-28Apr.2014(总第230期)1电子工业专用设备材料制造工艺与设备EquipmentforElectronicProductsManufacturing绝缘栅双极型晶体管(IGBT,InsulatedGate型转向NPT(NonPunchThrough)型,接着从NPT[2]Bipolar
8、Transistor)是由双极型三极管(BJT,Bipo-型转向FS型以及FS-Trench型:larJunctionTransistor)和绝缘栅型场效应管第一代:平面穿透型(Planar,PT),功耗100(MOSFET,Metal-Oxide-SemiconductorField-Ef-(相对值)fect-Transistor)组成的复合全控制电压驱动式功第二代:改进的平面穿透型(Planar,PT),功率半导体器件,集双极型功率晶体管和功率耗74(相对值)MOSFET的优点于一体,具有电
此文档下载收益归作者所有