低温磁控溅射制备CdS薄膜的结构和光学特性-论文.pdf

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1、第33卷第1期红外与毫米波学报V01．33．No．12014年2月J．InfraredMillim．WavesFebruary，2014文章编号：1001—9014(2014)01—0040—05DOI：10．3724／SP．J．1010．2014．00040StructuralandopticalpropertiesofCdSthinfilmspreparedbyRFsputteringZHUYan．Yan，XURun，FANFZe．Be(1．DepartmentofMathematicsandP

2、hysics，ShanghaiUniversityofElectricPower，Shanghai200090，China；2．SchoolofMaterialsScienceandEngineering，ShanghaiUniversity，Shanghai200072，China；3．DepartmentofPhysics，ShaoxingUniversity，Shaoxing312000，China)Abstract：Cadmiumsulfidethinfilmsweregrownontran

3、sparentconductiveoxidecoatedglasssubstratesbyradiofrequencymagnetronsputteringwithasubstratetemperaturerangingfrom30oCto200℃．X—raydiffractionmeasurementsrevealthatcadmiumsulfidefilmswerepolycrystallinewiththehexagonalwurtzitestructure．Thescanningelectr

4、onmicroscopeimagesshowagoodcrystallinequalityofthefilmswhichcanalsobeconfirmedbytheRamanspectraultraviolet—visibleabsorption，spectraandthephotoluminescencespectroscopy．TheRamanspectrameasurementsindicatethatthecompressivestressintheCdSfilmsincreaseswit

5、hincreasinggrowthtemperature．Keywords：CdS；magnetronsputtering；solarcellPACS：81．05．Dz，81．15．Cd，96．60．Aj低温磁控溅射制备CdS薄膜的结构和光学特性朱燕艳h，徐闺，方泽波。(1．上海电力学院数理学院，上海200090；2．上海大学材料系，上海200072；3．绍兴文理学院物理系，浙江绍兴312000)摘要：用磁控溅射的方法在透明导电氧化物衬底上制备了CdS薄膜，制备时的衬底温度为30～200℃．X射线衍

6、射测试结果表明在这一条件下制备的CdS薄膜是六角纤锌矿的多晶结构．扫描电子显微镜结果显示薄膜具有较好的晶体质量，这一结论也和拉曼光谱、紫外一可见吸收光谱、光致发光光谱的结果一致．拉曼光谱显示CdS薄膜内部的压应力随着制备温度的提高而增大．关键词：CdS；磁控溅射；太阳能电池中图分类号：P578．2；TN305．92；TM914．4文献标识码：Aformanyphotovoltaicsolarcellroodu1es[1Introduction．Further_more，CdShasremaineda

7、safocusofthematerialsci．Cadmiumsulfide(CdS)isagroup1I一1Vcon—encecommunityduetoitsbandgap，conversioneffi—poundsemiconductorwhichhasgreatpotentialinap—ciency，highabsorptioncoeficient，stabilityanditsplicationssuchassolarcells，opticaldetectorsandop-signifi

8、cantlylowcost．CdShasawideanddirectbandtoelectronicdevices．Theelectricalandopticalproper-gap(about2．42eVatroomtemperature)，n—typetiesmakeitextremelyusefulaswindowlayermaterialsemiconductingmaterialandfoundintwocrystallineReceiveddate：201