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时间:2020-03-27
《微创手术式硅微机械加工(MISSM)技术.pdf》由会员上传分享,免费在线阅读,更多相关内容在行业资料-天天文库。
1、第25卷第7期传感Vo1.25No.72012年7月CHINESEJOURNALJu1.2012TheMinimally-Invasive-Surgery-LikedSiliconMicromachining(MISSM)TechnologyWANGJiachou,Jiedan,LIXinxin,(1·StateKeyLab。ratoryofTransducerTechnology,ShanghailnstituteofMicrosystemandlnforrr~,tionTechn。logy.ChineseacademyofSciences.Shanghai2
2、00050,China;2.ResearchInstituteofMicro/NanoScienceandTechn0logy,ShanghaiJiaoTongUniversity,Shanghai200240,Chin。)Abstract:Anovelminimally—invasive—surgery—likedsiliconmicromachining(MISSM)technologyispresentedinthispaper,whichtakefulladvantageofthe(111)siliconwafercrystalorientationdi
3、stributionandthecharacteristicsoftheanisotropicwetetching.Byfabricatingserialsofreleasingmini-holesinonesideofthesiliconwafertodefinethedesignedstructureshapeanddimensions,aselectiveself-stopwetetchingtechnologyinsidethesiliconsubstratecouldberealized,andthen,va~oussizesofthecavities
4、structurecanbeformedbeneaththemonocrystallinesilicOnstructurelayerswithalltheboundarywallsas{111}planes.Furthermore,accordingtotherequirementforthedesignofthedifierentdevicestructure,thereleasingmini.holeslocatedintheformedmOBOCrystallinestructurelayercanbesealedtoformperfectsingle—-
5、crystal—-silicondiaphragmonwhichsubsequentfabricationprocesscanbeperformed.Finally,themovablestructurecouldbeselectivelyreleasedbyetchingthediaphragm.TheMISSMtechnologynotonlyhastheadvantageofsingle-wafer--basedsingle·-sidedmicromachiningbutalsoiscompatiblewithICfabricationprocess.In
6、thepaper,theformationmechanismofthe3-Dimensionsmicro—structurefabricatedwithMISSMtechnologyandrelevantfabricationprocessaredescribedindetail.Then,thekeytechnologyisanalyzedandsatisfyingresultsareachieved.Keywords:MEMS;MISSM;single-wafer-basedsingle-sidedmicromachining;releasingmini-h
7、olesEEACC:7230;0170Gdoi:10.3969/j.issn.1004—1699.2012.07.004微创手术式硅微机械加工(MISSM)技术球王家畴,刘洁丹,李昕欣(1.中国科学院上海微系统与信息技术研究所传感技术联合国家重点实验室,上海200050;2.上海交通大学微纳科技研究院,上海200240)摘要:介绍了一种新颖的微创手术式硅微机械加工(MISSM)技术,该技术充分利用(111)硅片的晶向分布和各向异性湿法腐蚀的特性。通过在单晶硅片表面制作一系列微型释放窗El来定义结构的轮廓及尺寸,实现在单晶硅片内部选择性可自停止腐蚀技术,制作出不同
8、结构尺寸的腔体。同时,结
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