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时间:2020-03-27
《湿化学工艺导电性LaNiO3薄膜的制备表征及应用.pdf》由会员上传分享,免费在线阅读,更多相关内容在行业资料-天天文库。
1、第23卷第4期化学研究与应用Vo1.23,No.42011年4月ChemicalResearchandApplicationApr.,2011文章编号:1004—1656(2011)04-0401-07湿化学工艺导电性LaNiO3薄膜的制备表征及应用彭焕英,殷明志,杨亮亮,蒋迪波(西北工业大学理学院,陕西西安710129)摘要:为改进以醇盐为原料溶胶—凝胶制备LaNiO,(LNO)薄膜工艺中存在的诸多苛刻因素,本文以无机盐为原料,利用湿化学工艺在硅衬底上制备了LNO薄膜,La(NO,),·6H:O和Ni(NO,2·6H:O冰醋酸溶液通过配
2、体交换形成金属醋酸盐的冰醋酸溶液,回流时用乙酸酐(CH,CO):O除硝酸根和结晶水,而乙酰丙酮(AcAc)部分取代醋酸盐分子中的醋酸根而形成的M(OAc)..(AcAc)(M=La3或Ni“)能部分水解形成M(OH)(AcAc)。该羟基金属离子通过羟基聚合并与甲基纤维素(MCL)形成线状结构LNO溶胶,易于成膜。LNO薄膜经过550.850~C/60min退火形成多晶膺立方钙钛矿结构,其晶格参数a=3.84A。四引线法测定厚度0.61.tmLNO薄膜电阻率与温度的变化在-163—150~U之间能符合P=P。+A,I’2关系式。在1KHz测
3、试频率下,测得Pb(Zr0.52Tin柏)O3(PZT)(52/48)薄膜剩余极化强度Pr在LNO/Pt/Ti/SiO2/Si衬底和Pt/Ti/SiO2/Si衬底上分别为19.6和23.5tLC·cm,矫顽场分别为76.1和85.1kV·cm~。关键词:溶胶一凝胶工艺;LaNiO3薄膜;PZT/LNO中图分类号:O614.3文献标识码:AFabrication,characterizationandapplicationsofconductiveLaNiO3filmsthsol-chemicalprocessPENGHuan—ying,Y
4、INMing—zhi’,YANGLiang—liang,JIANGDi—bo(SchoolofScience,NorthwesternPolytechnicUniversity,Xi’all,710129,China)Abstract:Basingonimprovingharshconditionsofsol—gelprocessofalkoxides,adenseconductiveLaNiO3(LNO)filmsonSiC2/Sisubstrateswerefabricatedbysol—chemicalprocesswithcorr
5、espondinginorganicsalts.Lanthanumacetateandnickelacetateglacialaceticacidsolutionswerepreparedvialigandexchangestartingfromlanthanumnitratehexahydrateandnickelnitratetetrahydrateafterbeingrefluxed,(CH3co)2OremovednitratesandthecrystallizedH20completely.Acetylacetone(AcAc)
6、waspartiallybi—dentatedwiththemetallicionofthemetallicacetatesandformedM(OAc)(AcAc),whichwerehydrolyzedintoM(OH)(AcAe)byaddinglOml0.4%MCL(methylcellulose)solution.eM(OH)(AcAc),polymerizingandcombiningwithMCL.formedLNOsolprecursorwithheteropolymericstructureandfilmingeasil
7、y.PerovskiteLNOfilmswereannealedat550—850℃/6Ominanditslatticeparameteris0.384aw1.ThetemperaturedependenceofresistivityforLNOfilmwith0.6mthicknessthatmeasuredbythefour-probemethodcanfitwellbythePP0+Abetween一163-15O.rI'heremnantpolarizationsandcoer-clvefieldsforPb(z52Tio.48
8、)O3(PZT)()thinfilmswithLNO/Pt/Ti/SiO2/sjandPIsi02/siassubstratesare19.6and’U23.5tLC·cm.76.1and85
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