迁移率散射机理.ppt

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1、工作汇报——迁移率散射机理ThicknessofBOXandGroundPlaneComparedFDSOIdeviceswithdifferentBOXthicknesseswithorwithoutgroundplane(GP)ThicknessofBOXandGroundPlaneDrainInducedBarrierLowering(DIBL)wasreducedbyaround50mVbyusingathinBOXinsteadofathickBOX,GPprovidesananditionalDIBL

2、reduction.ThicknessofBOXandGroundPlaneThesubthresholdslopeisslightlydegradedbyusingthinBOXdueintothecapacitanceincreaseinducedandalsotothesuppressionofthedepletedzoneunderBOXintthecasewhereGPisused.ThicknessofBOXandGroundPlaneThemobilityreductionascomparedtot

3、heuniversalmobilitycurvesisduetothereducedthicknessofthefilm(~8nm)andalsototheHigh-Kdielectric.ThicknessofBOXandGroundPlaneId(Vg)characteristicsQuantumModelingoftheCarrierMobilityinFDSOIDevicesComputedtheelecctronandholemobilitiesinultrathinbodyandburiedoxide

4、,fullydepletedsilicononinsulatordeviceswithvarioushigh-kmetalgate-stacksusingnonequilibriumGreen'sfunctions(NEFG).ThemobilityinUTBB-FDSOIdevicesisactuallylimitedbyacomplexinterplaybetweencarrier–phononsinteractions,frontinterfaceroughness(FSR)andbackinterface

5、roughness(BSR),remoteCoulombscattering(RCS),andpossiblyremotephononscattering(RPS).Thestrengthofmostofthesemechanismsdependsalotontheappliedfrontandbackgatebiasvoltages.TheseresultsshowthatFDSOIdevicesareaforemosttooltosortoutthedifferentscatteringmechanismsi

6、nSidevices,andthatNEGFcanprovidevaluableinputstotechnologycomputeraideddesign.developedamultibandsk·pnonequilibriumGreen’sfunctions(NEGF)codeabletodealwithrealistic,largescalestructuresQuantumModelingoftheCarrierMobilityinFDSOIDevices7.5-nm-thickSifilmona25-n

7、mBOX;Thefrontgate-stackismadeofa1.8-nm-thickHfSiONlayerontopofaSiONinterfaciallayer(IL)withthiccknessrangingfrom1.2to4nm.Theelectronandholemobilitishavebeenmeasuredalong[001]withasplitCVmethod.ThecarriermobilitiesshowastrongdependenceonVbgasthedeviceswitchesf

8、romfronttobackinterfaceinversion.theelectronandholemobilitypeakshiftsfromlow-carrierdensityforVbg=0V,tohigh-carrierdensityn≈1013cm−2forVbg=±8V.QuantumModelingoftheCarrierMobilityinFDSOIDe