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ID:47363991
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时间:2020-01-10
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1、.Ingot-Acylindricalsolidmadeofpolycrystallineorsinglecrystalsiliconfromwhichwafersarecut.晶锭-由多晶或单晶形成的圆柱体,晶圆片由此切割而成。LaserLight-ScatteringEvent-Asignalpulsethatlocatessurfaceimperfectionsonawafer.激光散射-由晶圆片表面缺陷引起的脉冲信号。Lay-Themaindirectionofsurfacetextureonawafer.层-晶圆片表面结构的主要方向。Ligh
2、tPointDefect(LPD)(Notpreferred;seelocalizedlight-scatterer)光点缺陷(LPD)(不推荐使用,参见“局部光散射”)Lithography-Theprocessusedtotransferpatternsontowafers.光刻-从掩膜到圆片转移的过程。LocalizedLight-Scatterer-Onefeatureonthesurfaceofawafer,suchasapitorascratchthatscatterslight.Itisalsocalledalightpointdefec
3、t.局部光散射-晶圆片表面特征,例如小坑或擦伤导致光线散射,也称为光点缺陷。Lot-Wafersofsimilarsizesandcharacteristicsplacedtogetherinashipment.批次-具有相似尺寸和特性的晶圆片一并放置在一个载片器内。MajorityCarrier-Acarrier,eitheraholeoranelectronthatisdominantinaspecificregion,suchaselectronsinanN-Typearea.多数载流子-一种载流子,在半导体材料中起支配作用的空穴或电子,例如在N
4、型中是电子。MechanicalTestWafer-Asiliconwaferusedfortestingpurposes.机械测试晶圆片-用于测试的晶圆片。Microroughness-Surfaceroughnesswithspacingbetweentheimpuritieswithameasurementoflessthan100μm.微粗糙-小于100微米的表面粗糙部分。MillerIndices,ofaCrystallographicPlane-Asystemthatutilizesthreenumberstoidentifyplanori
5、entationinacrystal.Miller索指数-三个整数,用于确定某个并行面。这些整数是来自相同系统的基本向量。MinimalConditionsorDimensions-Theallowableconditionsfor..determiningwhetherornotawaferisconsideredacceptable.最小条件或方向-确定晶圆片是否合格的允许条件。MinorityCarrier-Acarrier,eitheraholeoranelectronthatisnotdominantinaspecificregion,suc
6、haselectronsinaP-Typearea.少数载流子-在半导体材料中不起支配作用的移动电荷,在P型中是电子,在N型中是空穴。Mound-Araiseddefectonthesurfaceofawafermeasuringmorethan0.25mm.堆垛-晶圆片表面超过0.25毫米的缺陷。Notch-Anindentontheedgeofawaferusedfororientationpurposes.凹槽-晶圆片边缘上用于晶向定位的小凹槽。OrangePeel-Aroughenedsurfacethatisvisibletotheunaid
7、edeye.桔皮-可以用肉眼看到的粗糙表面OrthogonalMisorientation-直角定向误差-Particle-Asmallpieceofmaterialfoundonawaferthatisnotconnectedwithit.颗粒-晶圆片上的细小物质。ParticleCounting-Wafersthatareusedtotesttoolsforparticlecontamination.颗粒计算-用来测试晶圆片颗粒污染的测试工具。ParticulateContamination-Particlesfoundonthesurfaceof
8、awafer.Theyappearasbrightpointswhenacollineated
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