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1、ARTICLEReceived27Feb2014
2、Accepted17Jul2014
3、Published21Aug2014DOI:10.1038/ncomms5720AnupconvertedphotonicnonvolatilememoryYeZhou1,Su-TingHan1,XianChen1,FengWang1,2,Yong-BingTang3&V.A.L.Roy1,2,4Conventionalflashmemorydevicesarevoltagedrivenandfoundtobeunsafeforconfidentialdatastorage.Toens
4、urethesecurityofthestoreddata,thereisastrongdemandfordevelopingnovelnonvolatilememorytechnologyfordataencryption.Hereweshowaphotonicflashmemorydevice,basedonupconversionnanocrystals,whichislightdrivenwithaparticularnarrowwidthofwavelengthinadditiontovoltagebias.Withthehelpofnear-infrare
5、dlight,wesuccessfullymanipulatethemultileveldatastorageoftheflashmemorydevice.TheseupconvertedphotonicflashmemorydevicesexhibithighON/OFFratio,longretentiontimeandexcellentrewritablecharacteristics.1DepartmentofPhysicsandMaterialsScience,CityUniversityofHongKong,HongKong,China.2ShenzhenR
6、esearchInstitute,CityUniversityofHongKong,High-TechZone,NanshanDistrict,Shenzhen518057,China.3ShenzhenInstitutesofAdvancedTechnology,ChineseAcademyofSciences,Shenzhen518055,China.4CenterofSuper-DiamondandAdvancedFilms,andStateKeyLaboratoryofMillimeterWaves,CityUniversityofHongKong,Hong
7、Kong,China.CorrespondenceandrequestsformaterialsshouldbeaddressedtoV.A.L.R.(email:val.roy@cityu.edu.hk).NATURECOMMUNICATIONS
8、5:4720
9、DOI:10.1038/ncomms5720
10、www.nature.com/naturecommunications1&2014MacmillanPublishersLimited.Allrightsreserved.ARTICLENATURECOMMUNICATIONS
11、DOI:10.1038/ncomm
12、s5720nfrared(IR)lightisintheelectromagneticspectrumbetweenpolyethylenenaphthalate(PEN)-basedflexiblephotonicthevisibleandmicrowaveportions,andexhibitsextensivememoryarrayhasbeenfabricatedtopresentitscompatibilityIapplicationsinthermography,nightvision,energyconversion,withlowvoltageoper
13、ationandhighmechanicalflexibility.Tospectroscopy,medicalandtelecommunication1–5.Near-IRenergydemonstratethephotonicmemoryarrayforpracticaluse,(750–1,000nm)canalsobefurtherappliedinimplantablememoryarraywastestedundervariousbendingconditionsandelectronicdevicessinceitslongwavelengthall
