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1、W1B.3.pdfOFC2015©OSA2015A25Gb/s,520mW,6.4VppSilicon-PhotonicMach-ZehnderModulatorwithDistributedDriverinCMOSNanQi1,XianyaoLi2,HaoLi1,XiXiao3,LeiWang3,ZhiyongLi2,ZhuoGao4,YudeYu2,Miki,Moyal5,PatrickChiang1,61:SchoolofElectricalEngineeringandComputerScience,OregonStateUniversity,Corvallis,OR,USA,2
2、:InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083,China,3:WuhanResearchInstituteofPost&Telecommunications,Wuhan430074,China,4:AnalogDevices,Beijing100085,China,5:TogaNetworksLtd.,HodHasharon45244,Israel,6:DepartmentofMicroelectronics,FudanUniversity,Shanghai201203,China,1:qina@on
3、id.oregonstate.edu,6:pchiang@eecs.oregonstate.eduAbstract:A25Gb/sheterogeneously-integratedSilicon-PhotonictransmitterisdesignedentirelyinCMOS,consistingofahigh-swingdriverwire-bondedtoaMZmodulator.Measurementresultsdemonstratecleanopticaleyediagramswith>4dBextinctionratiowhileconsuming0.52W.OCI
4、Scodes:(200.4650)Opticalinterconnects;(250.3140)Integratedoptoelectronic;(250.5300)Photonicintegratedcircuits1.IntroductionSiliconphotonicsareanemergingtechnologyforenablingenergy-efficient,high-bandwidthandlow-costinterconnectsinnextgenerationdatacenters.ComparedwiththeVCSELandringresonatorbase
5、dopticallinks,theMach-ZehnderModulator(MZM)exhibitssuperiorperformancewithrespecttointerconnectdistanceandlinkrobustness.RecentlypublishedSi-PhotonicMZMs[1,3,4]exhibitlargemodulationbandwidthsbyutilizingtraveling-wavearchitectures.Unfortunately,thesehigh-speedtraveling-waveMZmodulatorstypicallyr
6、equirevoltage-swingsgreaterthan3VPPsingle-ended(SE)for>4dBextinctionratio,preventingtheuseofstandardCMOS,whosesupplyvoltageisapproximately1V.Conventionallarge-swingMZMdriversutilizingSiGeorInPtechnologiescangeneratehigh-voltageswingstodrivetheseMZMs,atthecostof>1Wpowerconsumption,difficultyinint
7、egratingmorefunctionality(suchasCDRsanddigitalprocessing),andlimitedprocessscalability.Thisworkpresentsa25Gb/ssilicon-photonicMZMdriverdesignedinastandard65nm-CMOSprocess,whichisthenco-packagedwithan180nmSOI-CMOSMZmodulator.
