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1、SecurityRefresh:PreventMaliciousWear-outandIncreaseDurabilityforPhase-ChangeMemorywithDynamicallyRandomizedAddressMappingNakHeeSeongDongHyukWooHsien-HsinS.LeeSchoolofElectricalandComputerEngineeringGeorgiaInstituteofTechnologyAtlanta,GA30332{nhseong,d
2、hwoo,leehs}@ece.gatech.eduABSTRACTGeneralTermsPhasechangememory(PCM)isanemergingmemorytechnol-Design,Experimentation,Performance,Securityogyforfuturecomputingsystems.Comparedtoothernon-volatilememoryalternatives,PCMismorematuredtoproduction,andhasKeyw
3、ordsafasterreadlatencyandpotentiallyhigherstoragedensity.ThemainroadblockprecludingPCMfrombeingused,inparticular,inPhaseChangeMemory,Security,WearLeveling,DynamicAd-themainmemoryhierarchy,isitslimitedwriteendurance.Toad-dressRemappingdressthisissue,re
4、centstudiesproposedtoeitherreducePCM'swritefrequencyorusewear-levelingtoevenlydistributewrites.1.INTRODUCTIONAlthoughthesetechniquescanextendthelifetimeofPCM,mostofPhasechangememory(PCM)hasemergedasonepotentialmem-themwillnotpreventdeliberatelydesigne
5、dmaliciouscodesfromorytechnologyforimprovingtheperformanceoftheoverallsys-wearingitoutquickly.Furthermore,allthepriortechniquesdidtemmemoryhierarchy.APCMcellismadeofphase-changema-notconsiderthecircumstancesofacompromisedOSanditssecu-terialbasedonchal
6、cogenidealloytypicallycomposedofGe,Sb,rityimplicationtotheoverallPCMdesign.AcompromisedOSwillandTe.Thematerialhastwodistinctphases—ahighelectri-allowadversariestomanipulateprocessesandexploitsidechan-calresistiveamorphousphaseandalowresistivecrystalli
7、nephase.nelstoacceleratewear-out.ThecrystallinephasecanbereachedbyheatingthematerialaboveInthispaper,wearguethataPCMdesignnotonlyhastocon-thecrystallizationtemperaturewhileitcanbeswitchedintothesidernormalwear-outundernormalapplicationbehavior,mostamo
8、rphousphasebymeltingandquicklyquenchingit.Adatabitimportantly,itmusttaketheworst-casescenariointoaccountwithcanbestoredineitherstates,whicharenon-volatile.ComparedthepresenceofmaliciousexploitsandacompromisedOStoad-tooating-gateashmemory,PCM
