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1、FabricationandCharacterizationofNanomaterialsJohnCarruthersPhysicsDepartmentPortlandStateUniversityJune26,20068/8/20211JohnCarruthers,PortlandStateUniversityFabricationandCharacterizationofNanomaterialsOutlineofOpeningLectureWhyphysicschangesatthenanoscaleExamplesofnanoscaledev
2、ices,circuits,andsystemsGeneralsemiconductorICfabricationmethodsandlimitationsNeedformetrologiestosupportsemiconductorfabrication,performanceevaluation,failureanalysis,andreliabilityassessmentTypesofmetrologiesWrapupandfuturechallenges8/8/20212JohnCarruthers,PortlandStateUniver
3、sity8/8/20213JohnCarruthers,PortlandStateUniversityWhyphysicschangesatthenanoscaleSurfacearea/volumeratioincreasesas1/Randthesurfacesandinterfacesbecomethemajorcontributortomaterialsproperties,thermodynamicbehavior,andenergycarrierdynamicsatthenanoscaleDiffusionofatomstosurface
4、sandinterfaceschangesthethermodynamicequilibriumconditionsSolidtransportofheat,matter,chargecarriers,photons,--allchangeatthenanoscalebecausethescatteringcentersarespacedfurtherapartthanthenanoscaledimensionsElectronicdensityofstatesbecomesdiscontinuouswhendimensionsarereducedt
5、oquantumwells,quantumwires,andquantumdots.Thisleadstonewphysicalconceptssuchasenergyfiltering,carrier“pocketengineering”,andelectronictransitions(suchassemimetal-semiconductortransitions)Size-dependentenergylevelsduetoquantumconfinementchangetheenergeticsofdopingsemiconductorna
6、nocrystalsFluidtransportinnanoscalechannelscanbeenhancedbyatomicsmoothness,contactanglechanges,andmolecularorderingofthemoleculesbeingtransported8/8/20214JohnCarruthers,PortlandStateUniversityWhyphysicschangesatthenanoscaleTerascalesemiconductordevicedensitiesleadtonewnanoscale
7、problems:OverlapofelectricfieldscausesthresholdvoltageloweringindevicesandparasiticsignaltransferininterconnectsTunnelinginducedleakagecausesexcessivechargelossacrossverythindielectrics(increasesexponentiallyas1/thickness)Excessiveheatgenerationduetotheinherentswitchingenergygo
8、vernedbythermodynamics(~100kTln2=1.7eV/switchatR.T.sot
