3000W PV太阳能逆变器设计

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1、产品的应用：逆变器INVERTER采用GaN的逆变器应用—1500W，DEMO板DC400Vin,240Vacout,98.7%,成本明显下降TPH3006PSSI-8230TIDSPSilicon-Labs同样大的逆变器产品,氮化镓的体积减小了一半左右,同时整体成本下降100USD,售价反提高了100USD.效率反提高了1.5个点.4500W,频率从16K提到到50K散热器,风散,驱动电路,电感,EMC电路可大大减小体积,还有填充物GaNmodulesallowedforkWclassPVpowerconditio

2、nerwith40%smallersizeandloss•Outputpower4.5kw(SinglePhase200V)•Inputvoltage60-400V•MaximumPowerEfficiency>98%(vs.>96.5%withSilicon)•Volumeabout10L<18L(existingSiliconbased)Courtesy:Testingdoneandpublishedby40%volumereduction>40%lossreductionYaskawaElectric.微型逆变

3、器应用传统线路输出采用600V的低频工作MOSFET无‘无功补偿’新的设计需要输出逆变高频化以尽可能提高无功补偿氮化镓适合高频，高效传统的采用变压器升压400V+L1L1+D1DG因氮化镓支持大比例升压且高效率达98以上。VINC1VOUT不同于传统的硅MOSFET,可直接boost升压SQ1*降低成本，空间节省微型逆变器应用采用氮化镓THP3006的温度明显低于COOL-MOSFETC6产品。81.7’CVS46.7’C效率直接提高2.5%MoreBandwidthforMotorDrives4kHz15kHz50

4、kHz100kHz500kHz1MHzRangeofswitchingRangeofswitchingfrequenciesfrequenciesusedinnowavailablewithGaNtypicalindustrialdrives.AdvantageofHigherSwitchingFrequency:SinusoidalDriveFeatures:•Highfrequencyenablessmalloutputfilters•PuresineoutputBenefits:•Lessmotorlossdu

5、etodistortion.•LessinsulationstressandEMIduetotransients.•Lesslossintheinverterduetoexternalcapacitance.QrrMeasurementConfirmsGaNHEMT’s25xAdvantageQrr=1000nCat9A,400VQrr=40nCat9A,400V•Bothmeasuredinthesametestboard•TransphormGaNHEMTwastestedat450A/μswithlittler

6、inging•CoolMOSwasnotstableat450A/μs.dI/dtreducedto100A/μsforstability.•GaNHEMThasQrrof25xlessthanCFD‐typeCoolMOS(LowQrrdesign).PerformanceBenchmarkingBetweenIGBTandGaNBridgesSiIGBTBridgeConverterGaNBridgeConverterVDDVSiC二极管DDLLVVODCODCDriverVOACDriverVOACRRLL•B

7、uckconverterisconfiguredfromahalfbridge•2state‐of‐the‐artHFIGBTs+2state‐of‐the‐artSiCSBDswereusedinIGBTbridge•2TransphormGaNHEMTswereusedinGaNbridgeSpeccomparison:IGBTGaNVbd600V600VImaxat25oC23A19AImaxat100C12A14AVce(Ron)2.1Vat12A(0.15Ω)OutputWaveformcomparison

8、:IGBTandGaNBridgesTurnonTurnoffRisetime:Falltime:GaN=2.8nSGaN=8nSSiIGBT=7nSSiIGBT=42nS•GaNhas2.5xfasterrisetime:Reducedcommutationloss•GaNhas5xfasterfalltime:Muchlessoutputc