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1、1.主管：150V管子损耗(W)50V输入28V输入12.5V输入管型15V输出5V输出15V输出5V输出15V输出5V输出备注（15W）SiR838DP0.161270.161580.130180.132850.17380.1834935ASi7738DP0.169760.170330.135580.1383Si7430DP0.156160.156820.133710.13796Si4472DY0.156160.156820.133710.1379650V输入28V输入12.5V输入15V输出5V输出15V输出5V输出15V输出5V输出备注（30W
2、）SiR838DP0.227550.240.23430.25410.467480.5129335ASi7738DP0.24020.253760.242420.2627Si7430DP0.23070.244720.270590.29817以SiR838DP为例：工况15V输出/12.5V输入/15W功率管子工况：参数准备：计算过程：a．开关损耗b．电容损耗c．驱动损耗计算结果(总损耗)：2.同步整流管：100V(当输出为15V时的整流管)损耗(W)50V输入28V输入12.5输入管型15V输出15V输出15V输出备注（15W）Si4100DY0.073
3、690.08653Si4484EY0.073140.06206Si4486EY0.098470.09138Si7454DP0.070740.059660.10727.8A15V输出15V输出15V输出备注（30W）Si4100DY0.159250.25099Si4484EY0.096290.09487Si4486EY0.13280.14737Si7454DP0.093890.09247SiR432DP0.116130.133690.304828ASi7322DN0.124710.18165Si4190DY(6V)0.495140.27184SiS89
4、2DN(6V)0.265420.166963.同步整流管：50V(含高于50V的管子)(当输出为5V时的整流管)损耗(W)50V输入28V输入12.5输入管型5V输出5V输出5V输出备注（15W）Si7164DP0.134930.128750.1726760ASi7174DP0.141130.13669Si7186DP0.143820.1559Si7852ADP0.120780.15714SiE876DF0.151410.14006SiJ482DP(6V)0.160370.11419SiR662DP(6V)0.245640.12312SiE818DF
5、(6V)0.131070.13847SiR826DP(6V)0.192710.11276SiR880DP(6V)0.189220.12079SiS468DN(6V)0.113980.163555V输出5V输出5V输出备注（30W）Si7164DP0.179990.212290.4167260ASi7174DP0.190420.22966Si7186DP0.237990.32512Si7852ADP0.263120.43449SiE876DF0.209780.22666SiJ482DP(6V)0.246000.24628SiR662DP(6V)0.32
6、2260.18368SiE818DF(6V)0.232110.30861SiR826DP(6V)0.251580.20297SiR880DP(6V)0.274690.24199SiS468DN(6V)0.327970.58488(1)NPN柱电流=3A,Vceo=60V,fp=130MHz,Hfe=100-300(2)PNP柱电流=3A,Vceo=60V,fp=130MHz,Hfe=100-300（3）P沟道JFET,Id>=2A；Vds=100V;Pd>=20W（4）TLV431，尺寸尽量小，尺寸小于So8，损耗同TLV431（70mW）,封装SO
7、T-23。（5）光耦PS2801能否封装为SO-4给出上述原型管和国产化尺寸，要求封装兼容，尽量小。4.供电推挽三极管(1)管子型号FZT851TA(NPN)2SD965AIc=6A,Icc=2mA,Vceo=60V,fp=130MHz,Hfe=100-300(2)管子型号FZT951TA(PNP)HB772HQIc=6A,Icc=1mA,Vceo=60V,fp=125MHz,Hfe=100-3005.启动管子(1)P沟道GFET,管子型号2N6845Id=4A,Vds=100V,Pd=20w,Rdson=0.69Ω;(2)NPN三极管,管子型号MM
8、BTA06LT1G(BC1653N4)Ic=0.1A,Vceo=80V,Icc=10mA,Icm=0.5A,
