seed layer solar cell

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1、Seedlayerprintedcontactformationforhighlydopedboronemittersofn-typesolarcellswithfrontsidejunctionArminRichter,MatthiasHörteis,JanBenickFraunhoferInstituteforSolarEnergySystemsISE2ndWorkshoponmetallizationofcrystallinesiliconsolarcellsKonstanz,14thApril2010©Frau

2、nhoferISEOutline¢Motivation¢Metallizationapproach¢Measuredspecificcontactresistance¢Shuntingbehaviorofthecontactformation¢Firstsolarcellresults¢Summary2©FraunhoferISEWhyn-typesiliconforsolarcellfabrication?¢Superiortoleranceoncommon¢Nolightinduceddegradationduei

3、mpurities(e.g.iron)toB-O-pairsasinp-typeCz-SiD.Macdonald,JAP2005J.Schmidt,22thEUPVSEC3©FraunhoferISEBoronEmitterPassivationAtomicLayerDepositionofAlO23¢Excellentperformanceatcelllevel¢OnlyverythinALDlayernecessaryVJFFηocsc[mV][mA/cm2][%][%]Bestcell704.541.182.42

4、3.9**ConfirmedatFraunhoferISECalLabBenicketal.,newresult4©FraunhoferISEThesolarcellstructuretexturedfrontsidefrontmetallizationSiNxantireflectioncoatingpassivationlayerp+emitter(borondoped)n-typebasen+-dopedBSFrearmetallization5©FraunhoferISEFiringstablepassivat

5、ionforp+dopedboronemittersEmitterprofile20¢Shallowindustrial-type10boronemitter:90Ω/sq)-3¢R=90Ω/sq19sh(cm10¢Surf.conc.:8x1019cm-318101710dopingconcentration16100.00.20.40.60.81.01.21.4depth(µm)6©FraunhoferISEFiringstablepassivationforp+dopedboronemittersAlOpassi

6、vation23280¢Passivationbyatomiclayershallow,industrial-typeborondepositedAl2O3(fA/cmemitter(90Ω/sq)passivatedby0e¢ExcellentJ0evaluesofJAl2O3(10nm)/SiNx(60nm)~45fA/cm²independentof60firingtemperatureÎGenerallyallowsforhigh-efficiencycells4020emittersaturationcurr

7、entdensity700750800850firingtemperature(°C)7©FraunhoferISEOurfrontsidemetallizationapproach¢Necessitiesforhigh-efficiencycellsregardingfrontsidecontact:¢Lowcontactresistance¢printedseedlayer¢Highlateralconductivity¢Thinfingers¢firedseedlayer¢Apromisingapproach:d

8、=18µm2layermetallizationpbase¢platedcontact8©FraunhoferISEThetwolayermetallizationAerosoljetprintedseedlayerafterelectro-plating¢Thinseedlayer:17µmwidth¢Totalcontact