A_Review_of_RESURF_Technology

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1、15P50'ZOOO.MayZZ25.Toulouse.FranceAReviewofRESURFTechnologyAdriaanW.LudikhuizePlulipsResearch,Eindhoven,TheNetherlandsFax+3I402743390.e-mailAdriaan.Ludikhuize@philips.comABSTRACTandpossiblelateralbreakdown,oneverticaldiodewithRESURF(ReducedSurfaceField)technologyisoneoftheh

2、orizontaln-/p-boundaryandpossibleverticalthemostwidely-usedmethodsforthedesignoflateralbreakdown.high-voltage,lowon-resistancedevices.ThetechniqueForathick(50pm)epitaxiallayerthebreakdownvolt-hasallowedtheintegrationofHVdevices,rangingfromageis470V([2]:370V)andthemaximumfie

3、ldisatthe20Vto1200V,withbipolarandMOStransistors.surfaceatthen-/p+junction(Fig.2a).Foramuchthin-Atechnicalreviewisgivenonthetechnologyasdevel-nerepitaxiallayer(15pm)thelateraldepletionlayerisopedduringthelast20years.Thepaperdiscussestheinfluencedbythedepletionlayerofthevert

4、icaln-/p-inventionanditsapplicationindiscretedevices,injunctionandthesurfacefieldisreduced:a2D-effect.AtJunction-IsolatedIC'sandSOI,andasMultipleResurf.thelughervoltageof1150V(Fig.2b)thefieldatthesur-Itincludesanevaluationoftopicslikebreakdown,on-facehas2peaks,oneoriginatin

5、gfromthen-/p+junctionresistance,hgh-sideandhigh-currenteffectsandreli-andanotherjustbelowthesurfaceatthecurvatureoftheability.n+/n-junction,withamoderatefieldinbetween.Ifthelateraldistanceissufficient,breakdownoccursnowI.KNVENTIONOFTHERESURFPRINCIPLEverticallyinthesemicondu

6、ctorbodyunderthen+re-Ahigherbreakdownvoltageinverticaldevicesusuallygion.requiresathickerandlowerdopedepitaxiallayer.How-ever,inexperimentalICsampleswithalateralisolationdiffusion,amuchhigherbreakdownvoltageisobtainedonathinnerlayer:herethesurfacefieldattheisolationjunction

7、isdecreasedby2-Ddepletion.ThisReducedSurfaceField(RESURF)effecthasanoptimumatatop-layerdoseQ/qofabout1.10l2at/cm2.AnintegrableLDMOSwithsurprisinglyhigh300Vbreakdownonthickepitaxywasobservedalreadyin1972[I].A400V.-_---(DSA-)LDMOSwithapincheddrainextensionwasreportedin1978[IA

8、];this'self-isolation'technologyisrelatedtoCMOSandhasbeenworkedoutandappliedmainly