A novel analytical model for the breakdown voltage

《A novel analytical model for the breakdown voltage》由会员上传分享，免费在线阅读，更多相关内容在学术论文-天天文库。

1、Solid-StateElectronics49(2005)43–48www.elsevier.com/locate/sseAnovelanalyticalmodelforthebreakdownvoltageofthin-filmSOIpowerMOSFETsa,*aaabWenweiYang,XinhongCheng,YuehuiYu,ZhaoruiSong,DashenShenaShanghaiInstituteofMicrosystemandInformationTechnology,ChineseAcademyofSciences,865ChangningRoad,Shanghai

2、200050,ChinabDepartmentofElectricalandComputerEngineering,UniversityofAlabamainHuntsville,Huntsville,Alabama35899,UnitedStatesReceived1November2003;receivedinrevisedform1June2004ThereviewofthispaperwasarrangedbyProf.S.CristoloveanuAbstractAnovelanalyticalmodelforthesurfacefielddistributionandbreakd

3、ownvoltageofthin-filmsilicononinsulator(SOI)powerMOSFETshasbeenproposed.Theanalyticalsolutionsforthesurfacepotentialandfielddistributionarederivedonthebasisofthetwo-dimensionalPoissonequation.Fromtheseexpressions,thedependenceofbreakdownvoltageonthedeviceparametersiscare-fullyexamined.Thevalidityoft

4、hismodelisdemonstratedbycomparisonwithnumericalsimulationsandexperimentaldata.Com-paredwithotheranalyticalmodels,thisapproachismoresuitabletoexplainthebreakdownbehavior.Ó2004ElsevierLtd.Allrightsreserved.Keywords:SOI;RESURF;Breakdownvoltage;Analyticalmodel1.Introductionsionforbreakdownvoltagecould

5、shortenthedesigncyclebyprovidingaccuratefirst-orderdesignschemesDuetothenumerousadvantagesoverconventionalandphysicalinsightsintothetradeoffsinevitablybulksilicontechnologysuchasspeed,isolationandden-encounteredintheoptimization.Unfortunatelythosesity,silicon-on-insulator(SOI)technologyisattractivee

6、xistinganalyticalmodelshavetodependonsomespe-topowerMOSFETinvariousapplicationsfromhighcialassumptions[10].Forexample,in[11]aparabolicvoltagepowerdevicestoradiofrequencypoweramplifi-potentialapproximationisproposedtoobtaintheers[1–4].Inthosestudiesbreakdownvoltageisalwaysapotentialfunctionbutitisin

7、validtoexplaintheeffectmajorconcern.Thereducedsurfacefield(RESURF)offieldoxide.In[12]somefittingparametershadtoprinciple[5–8]hasbeenextendedtoSOIpowerdevicesbeinducedtoexplainthebreakdownvoltagesaturation.[9],whichar