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1、IEEETRANSACTIONSONELECTROMAGNETICCOMPATIBILITY,VOL.54,NO.4,AUGUST2012947IncreasingEMIImmunityinNovelLow-VoltageCMOSOpAmpsAnnaRichelliAbstractAneasysolutiontoincreasetheimmunitytoelectro-II.STATEOFTHEARTmagneticinterferencesinrecentlow-voltageCMOSamplifiersispresented.Itisbasedonasimplemodifica
2、tionoftheinputstage,SomesolutionshavebeenrecentlyproposedtointrinsicallywhichcanbefabricatedinstandardCMOStechnologiesanddoesimprovetheimmunityoftheamplifierstoEMIsignalsarisingnotrequireextramasklevels,suchastriplewell,norexternalfromtheinputpins.Allthesesolutionsarefocusedontheclas-componen
3、ts.Analysisandresultsareprovidedforverylargein-sicalCMOSinputstage,basedonadifferentialpairbiasedbyaterferences,arisingfromtheinputpin.currentsource,asintheMillertopology.IndexTermsCMOS,immunitytoelectromagneticinterfer-Forexample,in[4],thedesignofaninputstageisreported,ences,integratedcircu
4、its,operationalamplifier.basedonadoublecross-connecteddifferentialpairalongwithasimplehighpassfilter.Anothersolutionhasbeenproposedin[5],basedonadoubledifferentialpair:inthisarchitecture,I.INTRODUCTIONthenominaldifferentialpairisbootstrappedusingbulkbiasing.Neverthless,followingthisapproach,on
5、lyaP-typedifferentialLargeelectromagneticinterferencescanbeconducteddi-inputstagecanbefabricatedinastandardCMOStechnology;rectlyviathechippackagepins,leadingtofailuresonthein-theN-typestagerequires,indeed,atriple-welltechnologyduetegratedcircuits(ICs)exposedtoEMI[1][3].Theincreasedtothebulkb
6、iasing.Morerecently,in[6],asimpledifferen-severityofterroristicalertinthelastyearsraisesseriouspre-tialpairwithanRClowpassfilterhasbeenillustrated.Inthisoccupationsonthevulnerabilityofsafetyelectronicequipmentcase,asexpected,thegainispreserved,whiletheinputfiltertointentionalEMattacks;moreover
7、,anincreasingnumberofdeterioratestheGBWandthephasemargine(PM).Ontheotherintegratedcircuitsarebecomingmoreandmoresusceptible;hand,thecircuitin[6]exhibitsahighimmunitytointerferences,indeed,thedecreaseingeometrylenghtinducesareductionexpeciallyatfreq