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1、JörgBerner,technicalcustomerSupport,2012-4-18IntroductiontoIGBTABBSwitzerlandLtd,Semiconductors©ABBMonthDD,YYYY
2、Slide1ContentIGBTandDiodeChipsCharacteristicsFoundryBusinessUSPHiPakModulesCharacteristicsApplicationUSPStakPakCharacteristicsApplicationSupportivetools/documents©
3、ABB8.30,2012
4、Slide2WhatisanIGBT?——InsulatedGateBipolarTransistor绝缘栅双极型晶体管simplifiedInsulatedGateBipolarequivalentTransistor=MOSCcircuitCcontrolledbipolartransistorGTurn-on(speed)isGdeterminedbytheMosfetEETurn-offbehaviorisdeterminedbythebipolar1mmtransistorSmallreverseblockingcapabi
5、lity(asymmetric)1cmManufacturedaschipswithamicrocellstructure~100’000cells/cm2Silicon0.05mm©ABB8.30,2012
6、Slide‹#›NPT—IGBTSPTFS-IGBTTrenchFS-IGBTGEGGEGGEGGEGNNNPNNNNNNN沟槽栅PPPN-N-N-沟衬空穴PIN区FS层道N-底FS层空穴积电子累TCPCNPCNPC例Infineon,Toshiba例I
7、nfineonIGBT310C平面NPTN型(mJ))TrenchNPTP(<1μm)SPTTrenchFS离子注入离子注入5平面FSSPT+例:Siemens例:ABBEon+Eoff(012.23.4VCE(sat)(V)两种元胞结构的显微照片平面栅沟槽栅©ABB8.30,2012
8、Slide‹#›SPT+IGBTandDiodeTechnologyIGBT:EmitterN-EnhancedSPT+cellN-EnhancementLayerAnodeCarrierLifetimeIncreasedcarrierconce
9、ntrationP+PPLowconductionlossesLocalGateLifetimePlanarcell-designShortChannelN-BaseControlLowgatecharge,goodturn-onN-BaseN+controllabilitySPT-BufferN-BufferFastvoltagedecayatturn-onLowturn-onlossesP+CathodeCollectorSPTbufferandsilicondesignSoftturn-offandgoodSCSOAHighturn-offrug
10、gedness(RBSOA)DiodeStrongAnodeforgoodSOAandsurgecapabilityDoublelifetimecontrolforlowlossesSPTbufferforsoftrecovery©ABBMonthDD,YYYY
11、Slide6ABBIGBTcharacteristicsIGBTsareturned-onbyapositiveG-Evoltage>G-EthresholdvoltageTheon-statecurveexhibitsastrongpositivetemperaturecoefficientE
12、nsuresgoodcurrentsharingwhenchipsareparalleled©ABB8.30,2012
13、Slide‹#›IGBTswitchingcharacteristicsIGBTsdonotrequiresnubbercircuitsAreoptimisedforinductiveswitchingIGBTsareswitchedbycharging/dischargingtheG-EcapacitanceRGislimitingtheGatecurrent+15VCreivrDRGIGSimplifiedGatedr