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1、Rashbaplasmon-polaritonsinsemiconductorheterostructuresI.V.Iorsh,1V.M.Kovalev,2,3M.A.Kaliteevski,4,5andI.G.Savenko4,6,71NationalResearchUniversityofInformationTechnologies,MechanicsandOptics(ITMO),St.Petersburg197101,Russia2InstituteofSemiconductorPhysics,SiberianBranch,RussianAcademyofScience
2、s,pr.AkademikaLavrenteva13,Novosibirsk,630090Russia3NovosibirskStateTechnicalUniversity,Novosibirsk,630095Russia4AcademicUniversity-NanotechnologyResearchandEducationCentre,Khlopina8/3,194021,St.Petersburg,Russia5IoffePhysical-TechnicalInstitute,Polytekhnicheskaya26,194021,St.Petersburg,Russia6
3、ScienceInstitute,UniversityofIceland,Dunhagi-3,IS-107,Reykjavik,Iceland7DivisionofPhysicsandAppliedPhysics,NanyangTechnologicalUniversity637371,Singapore(Dated:March15,2013)Weproposeaconceptofsurfaceplasmon-polaritonamplificationinthestructurecomprisinginterfacebetweendielectric,metalandasymmet
4、ricquantumwell.DuetotheRashbaspin-orbitinteraction,miminaofdispersionrelationforelectronsinconductionbandareshiftedwithrespecttothemaximumofdispersiondependenceforholesinΓ-point.Whenenergyandmomentumintervalsbetweenextremaindispersionrelationsofelectronsandholesmatchdispersionrelationofplasmon
5、s,indirectradiativetransitioncanamplifytheplasmons;excitationofleakymodesisforbiddenduetotheselectionrules.Efficiencyoftheindirectradiativetransitioniscalculatedanddesignofthestructureisanalysed.PACSnumbers:73.20.Mf,78.66.-wSurfaceplasmon-polaritons(SPPs),excitationswhichcanappearandpropagatealo
6、ngtheboundaryofadi-electric(insulator)andplasma,arewell-studiedquasi-particles,whichwerediscoverednearlyhalfacenturyago[1,2].Inrecentyears,surfaceplasmonshaveattractedsubstantialinterestduetotheirpotentialapplicationsinvariousoptoelectronicdevices[3–8].Theoscillationofanelectrongasrelativetomu
7、chmoremassiveionswithq4πNe2“plasmaangularfrequency”ωp=m(wheree,m,andNarethecharge,massandconcentrationofelec-trons)resultsinafrequencydependenceofthedielectric2ωconstantofplasma:ǫ(ω)=1−p,describingprop-ω(ω+iγ)agationoftransverseelectrom