资源描述：
《Atomic structure of collision cascades in ion-implanted silicon and channeling effects》由会员上传分享，免费在线阅读，更多相关内容在学术论文-天天文库。
1、Volume3.number3MATERIALSLETTERSJanuary1985ATOMICSTRUCTUREOFCOLLISIONCASCADESINION-IMPLANTEDSILICONANDCHANNELINGEFFECTSJ.NARAYANMicroelectronicsCenterofNorthCarolina,ResearchTrianglePark,NC27709,USAandMaterialsEngineeringDepartment,NorthCarolinaStateUniversity,Raleigh,NC27695.7907,USAO.S.O
2、ENSolidStateDivision,OakRidgeNationalLaboratory,OakRidge,TN37831,USAandD.FATHYandO.W.HOLLANDMicroelectronicsCenterofNorthCarolina,ResearchTrianglePark,NC27709,USAReceived29October1984WehaveinvestigatedtheatomicstructuresofcollisioncascadesinBi+-implantedsilicon.Theformationofsubcascadesor
3、bunchingoftheprimarycascadesisclearlyobserved.Thecentralregionsofthecascadeswerefoundtobeamorphouswithahighdensityofdisorderinthesurroundingregions.Theexperimentalresultsarediscussedintermsofthecomputersimulationofthedepositeddamageenergyprofiles.Theeffectofchannelingonthedepositeddamagee
4、nergyprofileisexamined.Thepeakandintegrateddamageenergiesareconsiderablylowerinchannelingdirectionscomparedtorandomdirections.IonimplantationrepresentsacrucialstepintheInthispaper,wehaveusedhigh-resolutiontrans-fabricationofmicroelectronicdevices.Theimplanta-missionelectronmicroscopy[4]to
5、studytheatomictionbymonoenergeticionsintoarandomamorphousstructureofindividualcascades.Clearevidenceofsolidproducesanapproximategaussianprofileofbunchingorsubcascadeformationisobserved.Thedopant,anddisplacementdamage.Thedopantaswelleffectofionimplantationconditionsandchannelingasdisplacem
6、entdamageprofilesareverysensitivetoareexaminedtheoreticallyandexperimentally.Pene-theincidentdirectionswithrespecttoaxesandplanestratingdamageprofileswithsignificantreductioninincrystallinesolids.Thecriticalangleforchannelingtotaldamageproductioninthechannelingdirectionsisparticularlysens
7、itivetothenuclearchargeofthein-areemphasized.cidention(Zl)andsubstrateatoms(Z2),andenergySinglecrystalsof(100)and(110)orientationswereoftheincidentions(E)[1,21.Thereisacriticalangleimplantedwith100keV,208Bi+,50keV,3oSi+,andforchanneling[JIa(Z1,Z2/E)li2]belowwhichsig
