Analysis of reflectance spectra of implanted GaAs

Analysis of reflectance spectra of implanted GaAs

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1、Volume71,number5OPTICSCOMMUNICATIONS1June1989ANALYSISOFREFLECTANCESPECTRAOFIMPLANTEDGaAsK.JEZIERSKIInstituteofPhysics,TechnicalUniversity,Wyb.Wysp.2750-370Wroclaw,PolandandM.KULIKInstituteofPhysics,M.Curie-SktodowskaUniversity,20-031Lublin,PolandReceived14Novembe

2、r1988Reflectancespectrawithintheenergyrange2-6eVweremeasuredforGaAscrystalsimplantedwithAI+ions.Thedegreeofamorphousnessforsamplesimplantedwithdifferentdoseswascalculated.Considerationofsurfaceroughnessinfluenceonre-flectancewasnecessary.1.Introductioncrystalwasr

3、equired.InthemodelappliedthebasicassumptionsdealwiththeconceptoftheprofileofRecently,theopticalmeasurementshavebeenthedegreeofamorphousnessandwiththeuseofef-widelyusedforinvestigationofchangesintheop-fectivemediumapproximation(EMA)theoryticalconstantsofGaAsduetot

4、heformationofde-[10,11].Finally,surfaceroughnessinfluenceonre-fectsduringtheionimplantationprocess[1-6].Forflectionhadtobetakenintoaccounttogiveussat-thispurposeinmanycasesellipsometrywasappliedisfactoryresultsofthefittingprocedure.[7].Theaimorthispaperistodescri

5、betheuseofreflectancespectrummeasurementsasatoolforcharacterizationoftheimplantedlayers.Theresults2.ModelobtainedforGaAscrystalsimplantedwithAI+ionsarealsoofgreatimportance,e.g.fortechnologyofIntheimplantationprocessdiscussedtherewasoptoelectronicssystems.onlyone

6、varyingparameter:thedoseofions.LetusTheimplantationprocesswasmadeforGaAsn-assumethatwhenthedoseofionsislarger,thera-typecrystalsintheacceleratorUNIMAS-79[8].Thediationdamageinthesampleisgreater.WhenthecrystalswereimplantedwithA1÷ionsoftheenergydoseisbigenoughthec

7、ompleteamorphisationof100keVandwiththedifferentdosesfrom1013totheimplantedlayerisobserved.Forthesmallerdoses1016cm-2.Thenreflectancemeasurementsforthetheimplantedlayercanberegardedasamixtureofnear-normalincidenceinmonochromaticunpolar-twophases:crystallineandamor

8、phous[5,7].Theizedlightwerecarriedoutwiththeuseofamicro-volumefractionoftheamorphousphase,q,canbecomputerbasedsystemwiththespectrometerSPM-definedasthedegreeof

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