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1、Diamond&RelatedMaterials17(2008)1021–1028ContentslistsavailableatScienceDirectDiamond&RelatedMaterialsjournalhomepage:www.elsevier.com/locate/diamondNewinsightsintothemechanismofCVDdiamondgrowth:SinglecrystaldiamondinMWPECVDreactorsab,⁎Yu.A.Mankelevich,P.W.MayaNuclear
2、PhysicsInstitute,MoscowStateUniversity,119991Moscow,RussiabSchoolofChemistry,UniversityofBristol,BristolBS81TS,UnitedKingdomARTICLEINFOABSTRACTAvailableonline3April2008CVDDiamondcannowbedepositedeitherintheformofsinglecrystalhomoepitaxiallayers,oraspolycrystallinefilms
3、withcrystalsizesrangingfrommm,μmornm,andwithavarietyofgrowthratesuptoKeywords100sofμmh−1dependingupondepositionconditions.WepreviouslydevelopedamodelwhichprovidesaCVDdiamondcoherentandunifiedpicturethataccountsfortheobservedgrowthrate,morphology,andcrystalsizes,ofallMW
4、dischargeofthesetypesofdiamond.ThemodelisbasedoncompetitionbetweenHatoms,CH3radicalsandotherC1Modelingradicalspeciesreactingwithdanglingbondsonthediamondsurface.TheapproachleadstoformulaefortheSinglecrystalgrowthdiamondgrowthrateGandaveragecrystallitesizebdNthatuseasp
5、arameterstheconcentrationsofHandCHx(0≤x≤3)nearthegrowingdiamondsurface.Wenowextendthemodeltoshowthatthebasicapproachcanhelpexplainthegrowthconditionsrequiredforsinglecrystaldiamondfilmsatpressuresof100–200Torrandhighpowerdensities.©2008ElsevierB.V.Allrightsreserved.1.I
6、ntroductiontures,whichcanbepatternedtonmresolution[4,5].ThesedifferfromNCDfilms[6]sincetheyhavemuchsmallergrainsizes(~2–5nm).Diamondfilmscanbedepositedusingachemicalvapourdeposi-Mostreportsofthedepositionofthesefilmsdescribeusingation(CVD)processinvolvingthegas-phasedeco
7、mpositionofagasmicrowave(MW)plasmaCVDreactorandgasmixtureof1%CH4inmixturecontainingasmallquantityofahydrocarboninexcessAr,usuallywithadditionof1–5%H2[4].Wehavepreviouslyreportedhydrogen[1].Atypicalgasmixtureuses1%CH4inH2,andthistheuseofsimilarAr/CH4/H2gasmixturestodep
8、ositNCD(orUNCD)inproducespolycrystallinefilmswithgrainsizesinthemicronortensofahotfilament(HF)reactor[7],withthecompositionald