资源描述：
《An Ultra Wideband 5W Power Amplifier Using SiC MESFETs》由会员上传分享，免费在线阅读，更多相关内容在学术论文-天天文库。
1、AnUltraWideband5WPowerAmplifierUsingSiCMESFETsAhmedSayed,StefanvonderMarkandGeorgBoeckBerlinUniversityofTechnology,MicrowaveEngineeringGroup,HFT5-1,Einsteinufer25,10587Berlin,Germany,boeck@tu-berlin.de,Tel.+493031426895andFax.+493031426893Abstract—A5wattwidebandpowerampl
2、ifierusingaSiCendofthesection.Finally,thedesignprocedureandtheMESFEThasbeendesigned.ThefrequencyrangecoversexperimentalresultsareconcludedinSec.IV.10MHzto2.4GHzwithsmall-signalgainof8dB.Abroadbandchokestructurewithanewtechniquewasdevelopedtoobtaingoodisolationandlowlosso
3、vertheII.DESIGNPROCEDUREdesiredbandwidth.InputandoutputmatchingnetworksandshuntfeedbacktopologywereintroducedtoincreasetheA.TransistorChoice:bandwidth.AtVDS=30VandIDS=500mA,powerThefirstandmostimportantstepinpoweramplifierperformancemeasurementswithPAEofalmost35%,andesig
4、nistoselectasuitabletransistorinordertomeettheoutputpowerof≥37dBmand8dBpowergainovertherequiredspecificationsofanamplifier.Inthispaper,itisoperatingbandwidthwereachieved.Two-tonemeasurementsatfrequencyspacingof200kHzwerealsodoneandOIP2anddesiredtodesignanamplifierthatcov
5、ersawidefrequencyOIP3of76dBmand49dBm,respectively,wereobtained.rangefrom10MHzto2.4GHzwithaconsiderablyflatFinally,AM/AMandAM/PMdistortionsweremeasuredandgainof≥8dBandmaximumoutputpowerupto5watt.theresultsarediscussed.TheCREECRF-24010SiCMESFEThastherequiredspecificationso
6、fwidefrequencyrangeupto3GHz,10I.INTRODUCTIONwattat1dBcompressionand15dBsmallsignalgain.FeaturesofwidebandgapsemiconductorsthatprovideB.DCBiasingNetwork:highRFpowerdensity,smalldiesize,highbreakdownInthissectionthedesignofaDCbiasingcircuitthatvoltage,highfrequencyoperatio
7、nandlesscomplexisolatesRFfromDCinthedesiredbandwidthisdiscussed.amplifierarrangementforthedesignengineermadesuchItsimplyconsistsofaninductance(choke)andatechnologyaseriouschallengetosiliconLDMOSforcapacitanceinT-junction(DCfeedingandblocking).high-poweramplification[1-3]
8、.Inthelastyears,manyWhiledesigningthebroadbandchoke,itisrequiredtogetaauthors[4-6]haveutilizedSiCMESFET
