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1、NANOLETTERSChemicallyInducedPotentialBarriersat2007Vol.7,No.7theCarbonNanotube-Metal1863-1868NanoparticleInterfaceDouglasR.KauffmanandAlexanderStar*DepartmentofChemistry,UniVersityofPittsburgh,Pittsburgh,PennsylVania15260ReceivedFebruary9,2007;RevisedManuscriptReceived
2、May4,2007ABSTRACTSingle-walledcarbonnanotube(SWNT)fieldeffecttransistorswereelectrochemicallydecoratedwithPt,Pd,Au,andAgnanoparticles.Uponexposureto10ppmNOgasinN2atrendwasfoundwhereinthemagnitudeofelectrontransferintotheSWNTvalencebandscaledwiththeworkfunctionoftheindi
3、vidualmetal.ThistrendgivesexperimentalsupportfortheformationofametalworkfunctiondependentpotentialbarrierattheSWNT-nanoparticleinterface.AlargeamountofinteresthasbeendevelopedconcerningPt,Pd,Au,andAgnanoparticlesuponexposuretoNOgas.thefabricationandapplicationofcarbonn
4、anotubes(CNTs)Wehavefoundthatdevicesdecoratedwithdifferentmetalsdecoratedwithmetalnanoparticles.1-3WhiletheuseofsuchdemonstrateuniqueelectronicbehavioruponexposuretoNOnanohybridsisbecomingmorepopular,theintimateelec-gasinN2.Onthebasisofourexperimentalfindingsweshowtron
5、icrelationshipbetweentheCNTanddepositedmetalacorrelationbetweenthemetalworkfunctionofthenanoparticleisstillpoorlyunderstood.Ontheotherhand,nanoparticleandmagnitudeofelectronictransferintothetheelectronicinteractionsbetweenCNTsandbulkmetalSWNTnetworkoftheNTFETdevicewhic
6、hpointstowardcontactsarewelldescribedintheliterature.4-6Forexample,aworkfunctiondependentpotentialbarrierattheSWNT-Daiandco-workershavereportedthatnanotubefieldeffectnanoparticleinterface.transistors(NTFETs)experiencesensitivitytowardH2asaPreviousreportsdescribethefabr
7、icationofNTFETresultofmodificationoftheSchottkybarrierattheCNT-devices,12butbriefly,SWNTsweregrownviachemicalmetaljunction.7Similarly,H2sensitivitywasseeninPd-vapordeposition(CVD)ontoSiwafersandinterdigitateddecoratedNTFETsandhasbeenexplainedintermsofAu/Tielectrodeswer
8、ephotolithographicallypatternedontoelectrondonationthroughH2loweringthePdworkfunction.8theSWNTnetwork.Thechipswerewir
