硅薄膜太阳电池电极接触特性的分析

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1、AbstractAsaIlunexhaustedcleanenergy,theutilityanddevelopmentofsolarenergyispaidmoreattentionbypeople．Crystallinethinfilmssolarcellhasmoremerits：hi【曲conversionefficiencyofcrystalsiliconsolarcells,longlifetimeofbulksiliconsolarcells，simplemanufacturingpro

2、cessingofa-Sithinfilmssolarcell．Crystallinethinfilmssolarcellconsistofseverallayersofdifferentchemicalcompositionandhencedifferentopticalandelectronicproperties．Thestructureofsolarcellisglass／TCO／pinornipfrCO／AlorAginthistext．TherealeinterfaceeffectbeM啪

3、differentlayers，andthepropertiesofsolarcellisinfluencedbythem．TCO／p，p／iandnfl'CO／A1areimportantinterfaces．WemainlyresearchonthecontactcharacteristicofTCO／pandnfrco．Theexperimentsinclude：(1)p-Si：HweredepositedOildifferentTCO(Sn02，ZnO：AI，SnOgZnO：AI)byPECV

4、D，thecontactcharacteristicofdifferentTCOandp-Si：HWasstudied；(2)ZnO：A1weretexture,thentheinfluencingfactors011．roughsurfaceofZnO：AIareresearched．p-pc-Si：HweredepositedondifferentroughnessZnO：AIbyPECVD．thenthecontactcharacteristicofdifferentroughnessZnO：A

5、1withp-pc—Si：Hwereanalyzed；(3)n—a-Si：HweredepositedonZnO：A1byPECVD，thenZnO：A1werepreparedonn-a-Si：Hbyelectronbeamevaporationandmagnetronsputtering,thenthecontactcharacteristicofn-a-Si：H／ZnO：A!wereanalyzed．Thel'elsnIts嬲foflow：(1)Thecrystallineconditionof

6、p-Si：HOndifferentTCOareanalyzedsystematically：thecrystallinevolumefractionofP—Si：HonSn02higherthanothers．throughanalyzingthecalL∞isthattheroughsurfaceofSn02hasmorestructuressuchassurfacebulge,groove,bench,etc,andthesestructuresmayhaveeffectOilthenucleat

7、ionandgrowoffilms．(2)ThentheeffectoftheparametersonthecontactcharacteristicofTCO／PWasstudied．InourexperimentitWaSshowedthatcontactcharacteristicsof111Sn02／p-Si：HisnotsuperiortoZnO：AI／p-Si：HandSn02／ZnO：Al／p-Si：H．Throughanalyzingthecauseisthat：①theinterfa

8、cebetweenZnO：Al／p-Si：Hhasmoreinterfaceslat髂；②thesurfaceofZnO：Alisnottextured，andthesurfaceofSnOzismugh；③theearlierconcentrationofZnO：AithatweusedisbiggerthanSn02；④thestabilityofZnO：AIagainstHplasmatreatment．(3)ZnO：A1weretexturedb